DATA SHEET
SILICON POWER TRANSISTOR
2SC4550
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4550 is a power transistor developed for high-speed
switching and features low V
CE(sat)
and high h
FE
. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≥
100 (V
CE
= 2 V, I
C
= 1.5 A)
V
CE(sat)
≤
0.3 V (I
C
= 4 A, I
B
= 0.2 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25°C)
P
T
(Ta = 25°C)
T
j
T
stg
Ratings
100
60
7.0
7.0
14
3.5
30
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrode Connection
1. Base
2. Collector
3. Emitter
* PW
≤
300
µ
s, duty cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15596EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC4550
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector to emitter voltage
Collector to emitter voltage
Symbol
V
CEO(SUS)
V
CEX(SUS)
Conditions
I
C
= 4.0 A, I
B
= 0.4 A, L = 1 mH
I
C
= 4.0 A, I
B1
=
−I
B2
= 0.4 A,
V
BE(OFF)
=
−1.5
V, L = 180
µ
H, clamped
V
CB
= 60 V, I
E
= 0
V
CE
= 60 V, R
BE
= 50
Ω,
Ta = 125°C
V
CE
= 60 V, V
BE(OFF)
=
−1.5
V
V
CE
= 60 V, V
BE(OFF)
=
−1.5
V,
Ta = 125°C
V
EB
= 5.0 V, I
C
= 0
V
CE
= 2.0 V, I
C
= 0.7 A
V
CE
= 2.0 V, I
C
= 1.5 A
V
CE
= 2.0 V, I
C
= 4.0 A
I
C
= 4.0 A, I
B
= 0.2 A
I
C
= 6.0 A, I
B
= 0.3 A
I
C
= 4.0 A, I
B
= 0.2 A
I
C
= 6.0 A, I
B
= 0.3 A
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
C
= 1.0 A
I
C
= 4.0 A, R
L
= 12.5
Ω,
I
B1
=
−I
B2
= 0.2 A, V
CC
≅
50 V
Refer to the test circuit.
Fall time
t
f
0.1
0.3
100
150
0.1
1.0
0.3
1.5
100
100
60
0.3
0.5
1.2
1.5
V
V
V
V
pF
MHz
200
400
MIN.
60
60
TYP.
MAX.
Unit
V
V
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
I
CBO
I
CER
I
CEX1
I
CEX2
10
1.0
10
1.0
µ
A
mA
µ
A
mA
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Collector capacitance
Gain bandwidth product
Turn-on time
Storage time
I
EBO
h
FE1
*
h
FE2
*
h
FE3
*
V
CE(sat)1
*
V
CE(sat)2
*
V
BE(sat)1
*
V
BE(sat)2
*
C
ob
f
T
t
on
t
stg
10
µ
A
µ
s
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D15596EJ2V0DS
2SC4550
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
Case Temperature T
C
(°C)
Case Temperature T
C
(°C)
6LQJOH SXOVH
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
I
C
Derating dT (%)
Collector to Emitter Voltage V
CE
(V)
Transient Thermal Resistance R
th(j−c)
(°C/W)
Without heatsink
With infinite heatsink
Pulse Width PW (s)
Data Sheet D15596EJ2V0DS
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2SC4550
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