74LVCE1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Description
The 74LVCE1G125 is a single non-inverting buffer/bus driver
with a 3-state output. The output enters a high impedance
state when a HIGH-level is applied to the output enable (OE)
pin. The device is designed for operation with a power supply
range of 1.4V to 5.5V.
The inputs are tolerant to 5.5V
allowing this device to be used in a mixed voltage
environment. The device is fully specified for partial power
Pin Assignments
(Top View)
OE
A
1
2
4
5
Vcc
GND
3
Y
NEW PRODUCT
down applications using I
OFF
. The I
OFF
circuitry disables the
output preventing damaging current backflow when the device
is powered down.
SOT25 / SOT353
(Top View)
Features
OE
1
6
Vcc
NC
Y
•
•
•
•
•
•
•
•
Extended Supply Voltage Range from 1.4 to 5.5V
Switching speed characterized for operation at 1.5V
Offers 30% speed improvement over LVC at 1.8V.
± 24mA Output Drive at 3.3V
CMOS low power consumption
IOFF Supports Partial-Power-Down Mode Operation
Inputs accept up to 5.5V
ESD Protection Tested per JESD 22
Exceeds 200-V Machine Model (A115-A)
Exceeds 2000-V Human Body Model (A114-A)
Latch-Up Exceeds 100mA per JESD 78, Class II
Range of Package Options
Direct Interface with TTL Levels
SOT25, SOT353 and DFN1410: Assembled with “Green”
Molding Compound (no Br, Sb)
Lead Free Finish/ RoHS Compliant (Note 1)
A
GND
2
5
3
4
DFN1410 (Note 2)
Applications
•
•
•
•
•
Voltage Level Shifting
Bus Driver / Repeater
Power Down Signal Isolation
General Purpose Logic
Wide array of products such as.
o
PCs, networking, notebooks, netbooks, PDAs
o
Computer peripherals, hard drives, CD/DVD ROM
o
TV, DVD, DVR, set top box
o
Cell Phones, Personal Navigation / GPS
o
MP3 players ,Cameras, Video Recorders
•
•
•
•
•
Notes:
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
2. Pin 2 and pin 5 of the DFN1410 package are internally connected.
74LVCE1G125
Document number: DS32216 Rev. 2 - 2
1 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Absolute Maximum Ratings
(Note 3)
Symbol
ESD HBM
ESD MM
V
CC
V
I
V
o
Description
Human Body Model ESD Protection
Machine Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage applied to output in high impedance or I
OFF
state
Voltage applied to output in high or low state
Input Clamp Current V
I
<0
Output Clamp Current
Continuous output current
Continuous current through Vdd or GND
T
J
T
STG
Note:
Rating
2
200
-0.5 to 6.5
-0.5 to 6.5
-0.5 to 6.5
-0.3 to V
CC
+0.5
-50
-50
±50
±100
-40 to 150
-65 to 150
Unit
KV
V
V
V
V
V
mA
mA
mA
mA
°C
°C
NEW PRODUCT
V
o
I
IK
I
OK
I
O
Operating Junction Temperature
Storage Temperature
3. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device
operation should be within recommend values.
74LVCE1G125
Document number: DS32216 Rev. 2 - 2
3 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Electrical Characteristics
(All typical values are at Vcc = 3.3V, T
A
= 25°C)
Over recommended free-air temperature range (unless otherwise noted)
Symbol
Parameter
Test Conditions
Vcc
1.4 V to 5.5V
I
OH
= -100μA
I
OH
= -3mA
1.4 V
I
OH
= -4mA
1.65 V
High Level Output
V
OH
I
OH
= -8mA
2.3V
Voltage
I
OH
= -16mA
3V
I
OH
= -24mA
I
OH
= -32mA
4.5 V
1.4 V to 5.5V
I
OL
= 100μA
I
OL
= 3mA
1.4V
I
OL
= 4mA
1.65 V
V
OL
High-level Input Voltage I
OL
= 8mA
2.3V
I
OL
= 16mA
3V
I
OL
= 24mA
I
OL
= 32mA
4.5
I
I
Input Current
V
I
= 5.5 V or GND
0 to 5.5 V
Power Down Leakage
V
I
or V
O
= 5.5V
0
I
OFF
Current
Z State
V
O
=0 to 5.5V
3.6V
I
OZ
Leakage Current
1.4 V to 5.5V
V
I
= 5.5V of GND
I
CC
Supply Current
I
O
=0
3 V to 5.5V
One input at V
CC
–
Additional Supply
ΔI
CC
0.6 V Other inputs
Current
at V
CC
or GND
C
i
Input Capacitance
V
i
= V
CC
– or GND
3.3
SOT25
(Note 5)
Thermal Resistance
θ
JA
SOT353
(Note 5)
Junction-to-Ambient
DFN1410
(Note 5)
SOT25
(Note 5)
Thermal Resistance
(Note 5)
θ
JC
SOT353
Junction-to-Case
DFN1410
(Note 5)
Note:
NEW PRODUCT
Min
V
CC
– 0.1
1.05
1.2
1.9
2.4
2.3
3.8
Typ.
Max
Unit
V
0.1
.4
0.45
0.3
0.4
0.55
0.55
±5
± 10
10
10
500
3.5
204
371
430
52
143
190
V
μA
μA
μA
μA
μA
pF
o
C/W
o
C/W
5. Test condition for SOT25, SOT353 and DFN1410: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
74LVCE1G125
Document number: DS32216 Rev. 2 - 2
5 of 14
www.diodes.com
December 2010
© Diodes Incorporated
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
