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1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
SILICON POWER TRANSISTOR
2SB963-Z
PNP SILICON EPITAXIAL TRANSISTOR
(DARLINGTON CONNECTION)
<R>
DESCRIPTION
The 2SB963-Z is designed for switching, especially in Hybrid
Integrated Circuits.
PACKAGE DRAWING (Unit: mm)
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
Note
5.6 ±0.3
9.5 ±0.5
1.5
−0.1
+0.2
FEATURES
5.5 ±0.2
• High Gain h
FE
= 2000 to 3000
• Complement to 2SD1286-Z
1 2 3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
2.3 ±0.3
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Junction Temperature
Storage Temperature
Note 1
0.5 ±0.1
0.5 ±0.1
2.3 ±0.3
V
V
V
A
A
W
°C
°C
TO-252 (MP-3Z)
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
P
T
(T
A
= 25°C)
T
j
T
stg
−60
−60
−8
m1.0
m2.0
2.0
150
−55
to +150
0.15 ±0.15
1.
2.
3.
4.
Base
Collector
Emitter
Collector Fin
Note 2
Note
The depth of notch at the top of the fin is
from 0 to 0.2 mm.
Notes 1.
PW
≤
10 ms, Duty Cycle
≤
50%
2.
When mounted on ceramic substrate of 7.5 cm
2
× 0.7 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18261EJ4V0DS00 (4th edition)
(Previous No. TC-1627A)
Date Published July 2006 NS CP(K)
Printed in Japan
1.0 ±0.5
0.4 MIN.
0.5 TYP.
2.5 ±0.5
4
2.3 ±0.2
0.5 ±0.1
Note
1985, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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