2SA1891
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1891
Power Amplifier Applications
Power Switching Applications
Unit: mm
•
•
•
•
Low collector-emitter saturation voltage: V
CE (sat)
=
−0.5
V (max)
(I
C
=
−1
A)
High collector power dissipation: P
C
= 1.3 W (Ta = 25 °C)
High-speed switching time: t
stg
= 300 ns (typ.)
Complementary to 2SC5028
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
−60
−50
−6
−2
−4
−0.2
1.3
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-8M1A
Weight: 0.55 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
2SA1891
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE (1)
h
FE (2)
V
CE (sat)
V
BE (sat)
f
T
C
ob
t
on
20
μs
Switching time
Storage time
t
stg
Input
I
B2
Test Condition
V
CB
=
−60
V, I
E
= 0
V
EB
=
−6
V, I
C
= 0
I
C
=
−10
mA, I
B
= 0
V
CE
=
−2
V, I
C
=
−100
mA
V
CE
=
−2
V, I
B
=
−1.5
A
I
C
=
−1
A, I
B
=
−0.05
A
I
C
=
−1
A, I
B
=
−0.05
A
V
CE
=
−2
V, I
C
=
−100
mA
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
Output
30
Ω
Min
―
―
−50
120
40
―
―
―
―
―
Typ.
―
―
―
―
―
―
―
100
23
0.1
Max
−1.0
−1.0
―
400
―
−0.5
−1.2
―
―
―
V
V
MHz
pF
Unit
μA
μA
V
I
B2
I
B1
I
B1
―
0.3
―
μs
V
CC
=
−30
V
Fall time
t
f
−I
B1
= I
B2
= 0.05 A, duty cycle
≤
1%
―
0.1
―
Marking
A1891
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-09
2SA1891
r
th
– t
w
300
Curves should be applied in thermal limited area.
(single nonrepetitive pulse) Ta = 25°C
100
Transient thermal resistance
r
th
(°C/W)
30
10
3
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(s)
Safe Operating Area
−10
−5
1.6
P
C
– Ta
(W)
P
C
Collector power dissipation
−100
1 ms*
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
IC max (pulsed)*
10 ms*
Collector current I
C
(A)
−3
IC max (continuous)
−1
−0.5
−0.3
DC operation
(Ta = 25°C)
100 ms*
VCEO max
*:
Single nonrepetitive pulse
Ta = 25°C
Curves must be dated linearly
−0.05
with increase in temperature.
−0.1
−0.03
−0.1
−0.3
−1
−3
−10
−30
Collector-emitter voltage
V
CE
(V)
25
50
75
100
125
150
175
Ambient temperature Ta (°C)
4
2006-11-09
2SA1891
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
20070701-EN
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
•
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
•
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2006-11-09
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