CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Medium Power NPN Transistor
VOLTAGE 32 Volts
APPLICATION
* Medium Power Amplifier .
2SC4097GP
CURRENT 0.5 Ampere
FEATURE
* Surface mount package. (SC-70/SOT-323)
* Low saturation voltage V
* Low cob. Cob=6.0pF(Typ.)
CE(sat)
=0.4V(max.)(I
C
=500mA)
* P
C
= 200mW (mounted on ceramic substrate).
* High saturation current capability.
(2)
SC-70/SOT-323
CONSTRUCTION
* NPN Silicon Transistor
* Epitaxial planner type
(3)
1.3±0.1
0.3±0.1
0.65
2.0±0.2
0.65
MARKING
* HFE(P):PT
* HFE(Q):NE
* HFE(R):RA
0.05~0.2
0.1Min.
1.25±0.1
(1)
0.8~1.1
0~0.1
2.0~2.45
CIRCUIT
(1)
B
C
(3)
E
(2)
Dimensions in millimeters
SC-70/SOT-323
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Peak Collector Current
Peak Base Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
T
A
≤
25
O
C; Note 1
CONDITION
Open Emitter
Open Base
Open Collector
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
TOT
T
STG
T
J
T
AMB
MIN.
-
-
-
-
-
-
-
-55
-
-55
MAX.
40
32
5
500
500
10
250
+150
+150
+150
UNITS
Volts
Volts
Volts
mAmps
mAmps
mAmps
mW
o
C
C
C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2002-10
RATING CHARACTERISTICS ( 2SC4097GP )
ELECTRICAL CHARACTERISTICS
( At T
A
= 25 C unless otherwise noted )
PARAMETERS
Collector Cut-off Current
Emitter Cut-off Current
CONDITION
I
E
=0; V
CB
=20V
I
C
=0; V
EB
=4V
V
CE
=3V; Note 1
I
C
=100mA;
Note 2
SYMBOL
I
CBO
I
CEO
MIN.
-
-
TYPE
-
-
MAX.
1.0
1.0
UNITS
uA
uA
o
DC Current Gain
h
FE
82
-
390
Collector-Emitter Saturation
Voltage
Base-Emitter Saturatio
Voltage
Output Collector Capacitance
Transition Frequency
I
C
=500mA; I
B
=50mA
I
C
=500mA; I
B
=50mA
I
E
=ie=0; V
CB
=12V;
f=1MHz
I
C
=20mA; V
CE
=5V;
f=100MHz
V
CEsat
V
BEsat
C
ob
f
T
-
-
-
-
-
-
6.0
250
0.4
1.1
-
-
Volts
mVolts
pF
MHz
Note :
1. Pulse test: tp
≤
300uSec;
δ ≤
0.02.
2. h
FE:
Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390,
RATING CHARACTERISTIC CURVES ( 2SC4097GP )
Fig.1
1000
Grounded emitter propagation
characteristics
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
Fig.2
100
Grounded emitter output
characteristics (1)
COLLECTOR CURRENT : I
C
(mA)
Fig.3
500
Grounded emitter output
characteristics (2)
Ta=25
O
C
2mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
500
Ta=25
O
C
COLLECTOR CURRENT : I
C
(mA)
0.50
mA
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0.2
0.3
0.4
0.5
0.6
0.7 0.8
0.9
1.0
1.1
A
0.45m
.40mA
0
Ta=100
C
80
O
C
25
O
C
25
O
C
- 55
O
C
O
0.35mA
400
0.30mA
0.25mA
50
300
0.20mA
0.15mA
200
0.6mA
0.4mA
0.10mA
100
0.05mA
0.2mA
0
0
BASE TO EMITTER VOLTAGE : V
BE
(V)
I
B
=0A
0
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
I
B
=0A
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
RATING CHARACTERISTIC CURVES ( 2SC4097GP )
Fig.4 Collector-emitter saturation voltage
vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1
Fig.5 DC current gain vs.
collector current
1000
Fig. 6 Gain bandwidth product
vs. emitter current
500
DC CURRENT GAIN : h
FE
0.5
500
O
C
Ta=100
O
200
75
C
O
50
C
100
5
O
C
2
O
0
C
O
C
50
- 25
O
0
C
-
5
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25
O
C
l
C
/l
B
=10
V
CE
=3V
Ta=25
O
C
V
CE
=5V
200
0.2
0.1
100
0.05
20
50
0.02
0.5
1
2
5
10
20
50 100 200
500 1000
10
0.1 0.2
0.5 1
2
5 10 20
50 100 200 5001000
0.5
1
2
5
10
20
50
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25
O
C
f=1MHz
I
E
=0A
I
C
=0A
50
C ib
20
10
Co
b
5
2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
传感器
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