2SA1432
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1432
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Unit: mm
•
•
•
•
High voltage: V
CBO
=
−300
V, V
CEO
=
−300
V
Low saturation voltage: V
CE (sat)
=
−0.5
V (max)
Small collector output capacitance: C
ob
= 6 pF (typ.)
Complementary to 2SC3672
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−300
−300
−8
−100
−20
1000
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7D101A
Weight: 0.2 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21
2SA1432
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CBO
V
(BR) CEO
h
FE (1)
DC current gain
(Note 2)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE (sat)
f
T
C
ob
Test Condition
V
CE
=
−300
V, I
E
= 0
V
EB
=
−8
V, I
C
= 0
I
C
=
−0.1
mA, I
E
= 0
I
C
=
−1
mA, I
B
= 0
V
CE
=
−10
V, I
C
=
−20
mA
V
CE
=
−10
V, I
C
=
−1
mA
I
C
=
−20
mA, I
B
=
−2
mA
I
C
=
−20
mA, I
B
=
−2
mA
V
CE
=
−10
V, I
C
=
−20
mA
V
CB
=
−20
V, I
E
= 0, f = 1 MHz
Min
―
―
−300
−300
30
20
―
―
40
―
Typ.
―
―
―
―
―
―
―
―
60
6
Max
−0.1
−0.1
―
―
150
―
−0.5
−1.2
―
8
V
V
MHz
pF
Unit
μA
μA
V
V
Note 2: h
FE (1)
classification R: 30 to 90, O: 50 to 150
Marking
A1432
Part No. (or abbreviation code)
Lot No.
Characteristics
indicator
Note 3
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-12-21
2SA1432
I
C
– V
CE
−100
Common emitter
−10
Ta = 25°C
−5
−3
−2
−100
Common emitter
Ta = 100°C
I
C
– V
CE
−10
−5
−3
−2
−1
−0.5
−40
−0.3
−0.2
−20
IB =
−0.1
mA
0
−12
−14
0
0
−2
−4
−6
−8
−10
−12
−14
(mA)
−1
−0.8
−60
−0.6
−0.4
−0.3
−20
−0.2
IB =
−0.1
mA
0
0
0
−2
−4
−6
−8
−10
Collector current I
C
Collector current I
C
(mA)
−80
−80
−60
−40
Collector-emitter voltage V
CE
(V)
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
−100
−10
−5
−3
−2
Common emitter
Ta =
−55°C
−100
−10
−90
I
C
– V
CE
−80
−70
−60
−50
−6
−40
−4
−30
−20
IB =
−10 μA
0
0
0
−40
−80
−120
−160
−200
−240
−280
Common
emitter
Ta = 25°C
(mA)
Collector current I
C
−60
−1
−40
−0.8
−0.6
−0.5
−20
−0.4
−0.3
−0.2
IB =
−0.1
mA
−10
−12
−14
Collector current I
C
(mA)
0
−2
−4
−6
−8
−80
−8
−2
0
0
Collector-emitter voltage V
CE
(V)
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
−10
−70
−60
−50
Common emitter
Ta = 100°C
−10
I
C
– V
CE
Common emitter
Ta =
−55°C
(mA)
−40
(mA)
−8
−8
Collector current I
C
−6
Collector current I
C
−100
−6
−90
−80
−4
−70
−60
−50
−2
−40
−30
−20
IB =
−10 μA
−200
−240
−280
−30
−4
−20
−2
IB =
−10 μA
0
0
0
−40
−80
−120
−160
−200
−240
−280
0
0
0
−40
−80
−120
−160
Collector-emitter voltage V
CE
(V)
Collector-emitter voltage V
CE
(V)
3
2009-12-21
2SA1432
h
FE
– I
C
1000
Common emitter
500
VCE =
−10
V
Ta = 25°C
VCE =
−10
V
1000
500
h
FE
– I
C
Common emitter
VCE =
−10
V
DC current gain h
FE
300
DC current gain h
FE
300
Ta = 100°C
100
50
30
25
−55
100
50
30
−1
−5
10
−0.1
−0.3
−1
−3
−10
−30
−100
10
−0.1
−0.3
−1
−3
−10
−30
−100
Collector current I
C
(mA)
Collector current I
C
(mA)
V
CE (sat)
– I
C
Collector-emitter saturation voltage
−5
−3
V
BE (sat)
– I
C
−10
Base-emitter saturation voltage
Common emitter
IC/IB = 10
Common emitter
−5
IC/IB = 10
−3
(V)
−1
−0.5
−0.3
Ta = 100°C
−0.1
−0.05
−0.1
−55
−0.3
−1
25
−3
−10
−30
−100
(V)
V
CE (sat)
V
BE (sat)
−1
−0.5
−0.3
Ta =
−55°C
100
25
−0.1
−0.1
−0.3
−1
−3
−10
−30
−100
Collector current I
C
(mA)
Collector current I
C
(mA)
f
T
– I
E
Emitter input capacitance C
ib
(pF)
Collector output capacitance C
ob
(pF)
500
500
300
C
ib
, C
ob
– V
R
Common emitter
Ta = 25°C
f = 1 MHz
Ta = 25°C
100
50
30
Cib (IC = 0)
Transition frequency f
T
(MHz)
300
100
50
30
VCE =
−20
V
−10
10
5
3
Cob (IE = 0)
−5
10
0.3
1
3
10
30
50
1
0.1
0.3
1
3
10
30
100
300
Emitter current
I
E
(mA)
Reverse voltage
V
R
(V)
4
2009-12-21
2SA1432
P
C
– Ta
1.4
−0.5
−0.3
1.2
1.0
−0.1
Safe Operating Area
IC max (pulsed)
IC max (continuous)
100 ms*
1 ms*
Collector power dissipation P
C
(W)
(A)
Collector current I
C
0.8
0.6
0.4
0.2
0
0
−0.05
−0.03
DC operation
Ta = 25°C
−0.01
−0.005
−0.003
*: Single nonrepetitive pulse
−0.001
Ta = 25°C
Curves must be derated linearly with
VCEO max
−30
−100
−300
−1000
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
−0.0005
increase in temperature.
−0.0003
−1
−3
−10
Collector-emitter voltage V
CE
(V)
5
2009-12-21
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