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DATA SHEET
SILICON POWER TRANSISTOR
2SC2654
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES
• Large current capacitance in small dimension: I
C(DC)
= 7 A
• Low collector saturation voltage:
V
CE(sat)
= 0.3 V MAX. (I
C
= 3.0 A)
• Ideal for use in a lamp driver
• Complementary transistor: 2SA1129
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(T
c
= 25°C)
P
T
(T
a
= 25°C)
T
j
T
stg
Ratings
100
40
7.0
7.0
15
3.5
40
1.5
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrode Connection
* PW
≤
300
µ
s, duty cycle
≤
10%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)1
V
BE(sat)1
V
CE(sat)2
V
BE(sat)2
t
on
t
stg
t
f
Conditions
V
CB
= 40 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 1.0 V, I
C
= 3 A*
V
CE
= 1.0 V, I
C
= 5 A*
I
C
= 3.0 A, I
B
= 0.1 A*
I
C
= 3.0 A, I
B
= 0.1 A*
I
C
= 5.0 A, I
B
= 0.5 A*
I
C
= 5.0 A, I
B
= 0.5 A*
I
C
= 5.0 A, I
B1
=
−I
B2
= 0.5 A
R
L
= 4.0
Ω,
V
CC
≅
20 V
PW
≅
50
µ
s, duty cycle
≤
2 %
40
20
0.3
1.5
0.6
2.0
1.0
2.5
1.0
V
V
V
V
µ
s
MIN.
TYP.
MAX.
10
10
320
Unit
µ
A
µ
A
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE1
classification M: 40 to 80, L: 60 to 120, K: 100 to 200, J: 160 to 320
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16134EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
电源技术
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