INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC2654
DESCRIPTION
·High
Collector Current:: I
C
= 7A
·Low
Collector Saturation Voltage
:V
CE(
sat
)
= 0.3(V)(Max)@I
C
= 3A
·Complement
to Type 2SA1129
APPLICATIONS
·Designed
for low-frequency power amplifiers and mid-speed
switching applications.
·Ideal
for use in a lamp driver.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Total Power Dissipation
@ T
a
=25℃
w
.cn
i
em
cs
.is
w
w
VALUE
100
40
7
UNIT
V
V
V
7
15
3.5
1.5
W
40
150
-55~150
℃
℃
A
A
A
P
C
Total Power Dissipation
@ T
C
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 3A; I
B
= 0.1A
B
2SC2654
MIN
TYP.
MAX
0.3
0.6
1.5
2.0
10
10
UNIT
V
V
V
V
μA
μA
I
C
= 5A; I
B
= 0.5A
B
I
C
= 3A; I
B
= 0.1A
B
I
C
= 5A; I
B
= 0.5A
B
V
CB
= 40V ; I
E
= 0
V
EB
= 5V; I
C
= 0
I
C
= 3A ; V
CE
= 1V
40
Switching Times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
w
.cn
i
em
cs
.is
w
w
I
C
= 5A ; V
CE
= 1V
20
I
C
= 5A ,R
L
= 4Ω,
I
B1
= -I
B2
= 0.5A,V
CC
≈
20V
320
1.0
2.5
1.0
μs
μs
μs
h
FE-1
Classifications
M
40-80
L
60-120
K
100-200
J
160-320
isc Website：www.iscsemi.cn
2
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