74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Description
The 74LVC1G10 is a single 3-input positive NAND gate with
a standard totem pole output. The device is designed for
operation with a power supply range of 1.65V to 5.5V. The
inputs are tolerant to 5.5V allowing this device to be used in a
mixed voltage environment. The device is fully specified for
partial power down applications using IOFF.
The IOFF
Pin Assignments
NEW PRODUCT
circuitry disables the output preventing damaging current
backflow when the device is powered down.
The gate performs the positive Boolean function:
Y
=
A
•
B
•
C
or
Y
=
A
+
B
+
C
Features
•
•
•
•
•
•
Wide Supply Voltage Range from 1.65V to 5.5V
± 24mA Output Drive at 3.3V
CMOS low power consumption
IOFF Supports Partial-Power-Down Mode Operation
Inputs accept up to 5.5V
ESD Protection Exceeds JESD 22
200-V Machine Model (A115-A)
2000-V Human Body Model (A114-A)
•
•
•
•
Latch-Up Exceeds 100mA per JESD 78, Class II
Range of Package Options
SOT26, SOT363, and DFN1010: Available in “Green”
Molding Compound (no Br, Sb)
Lead Free Finish/ RoHS Compliant (Note 1)
Applications
•
•
•
•
Voltage Level Shifting
General Purpose Logic
Power Down Signal Isolation
Wide array of products such as:
o
o
o
o
o
PCs, networking, notebooks, netbooks, PDAs
Computer peripherals, hard drives, CD/DVD ROM
TV, DVD, DVR, set top box
Cell Phones, Personal Navigation / GPS
MP3 players ,Cameras, Video Recorders
Notes:
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
74LVC1G10
Document number: DS35121 Rev. 1 - 2
1 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Pin Descriptions
Pin Name
A
GND
B
Y
Vcc
C
Description
Data Input
Ground
Data Input
Data Output
Supply Voltage
Data Input
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Logic Diagram
1
3
6
4
Y
A
B
C
Function Table
Inputs
B
H
X
L
X
Output
Y
L
H
H
H
A
H
L
X
X
C
H
X
X
L
Absolute Maximum Ratings
(Note 2)
Symbol
ESD HBM
ESD MM
V
CC
V
I
V
o
V
o
I
IK
I
OK
I
O
Description
Human Body Model ESD Protection
Machine Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage applied to output in high impedance or I
OFF
state
Voltage applied to output in high or low state
Input Clamp Current V
I
<0
Output Clamp Current
Continuous output current
Continuous current through Vdd or GND
T
J
T
STG
Notes:
Rating
2
200
-0.5 to 6.5
-0.5 to 6.5
-0.5 to 6.5
-0.3 to V
CC
+0.5
-50
-50
±50
±100
-40 to 150
-65 to 150
Unit
KV
V
V
V
V
V
mA
mA
mA
mA
°C
°C
Operating Junction Temperature
Storage Temperature
2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device
operation should be within recommend values.
74LVC1G10
Document number: DS35121 Rev. 1 - 2
2 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Recommended Operating Conditions
(Note 3)
Symbol
V
CC
Operating Voltage
Parameter
Operating
Data retention only
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 3 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
Min
1.65
1.5
0.65 X V
CC
1.7
2
0.7 X V
CC
Max
5.5
Unit
V
V
V
0.35 X V
CC
0.7
0.8
0.3 X V
CC
5.5
V
CC
-4
-8
-16
-24
-32
4
8
16
24
32
20
10
5
125
V
IH
High-level Input Voltage
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V
IL
V
I
V
O
Low-level input voltage
Input Voltage
Output Voltage
V
V
V
0
0
V
CC
= 1.65 V
V
CC
= 2.3 V
I
OH
High-level output current
V
CC
= 3 V
V
CC
= 4.5 V
V
CC
= 1.65 V
V
CC
= 2.3 V
mA
I
OL
Low-level output current
V
CC
= 3 V
V
CC
= 4.5 V
V
CC
= 1.8 V ± 0.15V, 2.5 V ± 0.2 V
V
CC
= 3.3 V ± 0.3 V
V
CC
= 5 V ± 0.5 V
-40
mA
Δt/ΔV
T
A
Notes:
Input transition rise or fall
rate
Operating free-air
temperature
ns/V
ºC
3. Unused inputs should be held at Vcc or Ground.
74LVC1G10
Document number: DS35121 Rev. 1 - 2
3 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Electrical Characteristics
Symbol
Parameter
T
A
=-40
°C
to 125
°C
Test Conditions
(All typical values are at Vcc = 3.3V, T
A
= 25°C)
Vcc
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
0 to 5.5V
0
1.65V to 5.5V
3 V to 5.5V
3.3
(Note 4)
4
166
333
231
46
102
TBD
Min
V
CC
– 0.1
0.95
1.7
1.9
2.0
3.4
0.1
0.70
0.45
0.60
0.80
0.80
± 20
± 20
40
5000
Typ.
Max
Unit
V
OH
V
OL
I
I
I
OFF
I
CC
ΔI
CC
C
i
θ
JA
θ
JC
Notes:
I
OH
= -100μA
I
OH
= -4mA
I
OH
= -8mA
High Level Output
Voltage
I
OH
= -16mA
I
OH
= -24mA
I
OH
= -32mA
I
OL
= 100μA
I
OL
= 4mA
I
OL
= 8mA
High-level Input Voltage
I
OL
= 16mA
I
OL
= 24mA
I
OL
= 32mA
Input Current
V
I
= 5.5 V or GND
V
I
or V
O
= 5.5V
Power Down Leakage
Current
V
I
= 5.5V of GND
Supply Current
I
O
=0
Additional Supply
Input at V
CC
–0.6 V
Current
Input Capacitance
V
i
= V
CC
– or GND
SOT26
Thermal Resistance
SOT363
Junction-to-Ambient
DFN1010
SOT26
Thermal Resistance
SOT363
Junction-to-Case
DFN1010
V
NEW PRODUCT
V
μA
μA
μA
μA
pF
o
C/W
(Note 4)
o
C/W
4. Test condition for SOT26, SOT363 and DFN1010 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad
layout.
74LVC1G10
Document number: DS35121 Rev. 1 - 2
5 of 14
www.diodes.com
December 2010
© Diodes Incorporated
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