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MGV125-08

产品描述Variable Capacitance Diode, KA Band, 0.3pF C(T), 22V, Gallium Arsenide, Hyperabrupt, CASE C01A, 1 PIN
产品类别分立半导体    二极管   
文件大小612KB,共8页
制造商Cobham Semiconductor Solutions
标准  
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MGV125-08概述

Variable Capacitance Diode, KA Band, 0.3pF C(T), 22V, Gallium Arsenide, Hyperabrupt, CASE C01A, 1 PIN

MGV125-08规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Cobham Semiconductor Solutions
包装说明S-XUUC-N1
针数1
制造商包装代码CASE C01A
Reach Compliance Codeunknown
ECCN代码EAR99
最小击穿电压22 V
配置SINGLE
二极管电容容差16.66%
标称二极管电容0.3 pF
二极管元件材料GALLIUM ARSENIDE
二极管类型VARIABLE CAPACITANCE DIODE
频带KA BAND
JESD-30 代码S-XUUC-N1
元件数量1
端子数量1
封装主体材料UNSPECIFIED
封装形状SQUARE
封装形式UNCASED CHIP
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散0.25 W
认证状态Not Qualified
最小质量因数4000
表面贴装YES
端子形式NO LEAD
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED
变容二极管分类HYPERABRUPT

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GaAs Hyperabrupt Varactor Diodes
MGV Series
Description
The MGV series of hyperabrupt varactor diodes feature
passivated mesa construction for low leakage and excellent post
tuning drift. Available in three constant gamma families of 0.75,
1.0 and 1.25. These diodes will find application in tunable filters
and oscillators up to 40 GHz. Optimum performance is obtained
using die however packaged devices are available as well
diodes screened per MIL-PRF-19500 and MIL-PRF-38534.
Features
0 to 22 Volt tuning voltage
Tuning ratios up to 10 (typical)
Three constant gamma families -
0.75, 1.0, and 1.25
Screening per MIL-PRF-19500
and MIL-PRF-35834 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Power Dissipation
Chip
E28, E28X, & 0805-2
H20, P55 & P55
Operating Temperature
Chip
E28, E28X, & 0805-2
H20, P55 & P55
Storage Temperature
Soldering Temperature
Chip
Packaged
22 V
100 mA
250 mW at T
C
= 25
°C,
derate linearly to zero at T
C
= +200
°C
50
100 mW at T
A
= 25
°C,
derate linearly to zero at T
A
= +1
°C
100 mW at T
A
= 25
°C,
derate linearly to zero at T
A
= +200
°C
-65
°C
to +200
°C
-65
°C
to +1
°C
50
-65
°C
to +200
°C
Same as operating temperature.
+320
°C
for 10 seconds
+260
°C
peak per JEDEC J-STD-20C
Rating
Revision Date: 1 4/05
1/1

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