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2SB768L

产品描述2000mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252, MP-3Z, 3 PIN
产品类别分立半导体    晶体管   
文件大小532KB,共4页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 选型对比 全文预览

2SB768L概述

2000mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252, MP-3Z, 3 PIN

2SB768L规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码TO-252
包装说明SMALL OUTLINE, R-PSSO-G2
针数4
Reach Compliance Codeunknow
ECCN代码EAR99
外壳连接COLLECTOR
最大集电极电流 (IC)2 A
集电极-发射极最大电压150 V
配置SINGLE
最小直流电流增益 (hFE)60
JEDEC-95代码TO-252
JESD-30 代码R-PSSO-G2
元件数量1
端子数量2
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
功耗环境最大值2 W
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置SINGLE
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)10 MHz
VCEsat-Max1 V
Base Number Matches1

文档预览

下载PDF文档
DATA SHEET
SILICON POWER TRANSISTOR
2SB768
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
DESCRIPTION
The 2SB768 is designed for Color TV Vertical Deflection Output,
especially in Hybrid Integrated Circuits.
<R>
PACKAGE DRAWING (Unit: mm)
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
4
5.5 ±0.2
1.5
−0.1
+0.2
FEATURES
• High Voltage: V
CEO
=
−150
V
• Complement to 2SD1033
Note
5.6 ±0.3
9.5 ±0.5
2.3 ±0.2
0.5 ±0.1
Note
1.0 ±0.5
0.4 MIN.
0.5 TYP.
2.5 ±0.5
1 2 3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Note 1
Note 2
0.5 ±0.1
V
V
V
A
A
W
°C
°C
TO-252 (MP-3Z)
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
P
T
T
j
T
stg
−200
−150
−5
−2
−3
2.0
150
−55
to +150
0.5 ±0.1
2.3 ±0.3
2.3 ±0.3
0.15 ±0.15
1.
2.
3.
4.
Base
Collector
Emitter
Collector Fin
Total Power Dissipation (T
A
= 25°C)
Junction Temperature
Storage Temperature
Note
The depth of notch at the top of the fin is
from 0 to 0.2 mm.
Notes 1.
PW
10 ms, Duty Cycle
50%
2.
When mounted on ceramic substrate of 7.5 cm
2
× 0.7 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18264EJ4V0DS00 (4th edition)
(Previous No. TC-1625A)
Date Published July 2006 NS CP(K)
Printed in Japan
1985, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

2SB768L相似产品对比

2SB768L 2SB768
描述 2000mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252, MP-3Z, 3 PIN 2000mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252, MP-3Z, 3 PIN
是否Rohs认证 不符合 不符合
零件包装代码 TO-252 TO-252
针数 4 4
Reach Compliance Code unknow unknow
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 2 A 2 A
配置 SINGLE Single
最小直流电流增益 (hFE) 60 40
最高工作温度 150 °C 150 °C
极性/信道类型 PNP PNP
表面贴装 YES YES
标称过渡频率 (fT) 10 MHz 10 MHz
Base Number Matches 1 1

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