INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SB1293
DESCRIPTION
·High
Collector Current:: I
C
= -5A
·Low
Collector Saturation Voltage
: V
CE(sat)
= -1.0V(Max)@I
C
= -3A
·Wide
Area of Safe Operation
·Complement
to Type 2SD1896
APPLICATIONS
·Designed
for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
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i
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VALUE
UNIT
-100
V
-100
V
-5
V
-5
A
-10
A
40
W
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
C
OB
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
I
C
= -1mA; I
B
= 0
B
2SB1293
MIN
-100
-100
-5
TYP.
MAX
UNIT
V
V
V
I
C
= -50μA; I
E
= 0
I
E
= -50μA; I
C
= 0
I
C
= -3A; I
B
= -0.3A
B
-1.0
-1.5
-10
-10
320
120
12
V
V
μA
μA
I
C
= -3A; I
B
= -0.3A
B
Output Capacitance
Current-Gain—Bandwidth Product
h
FE
Classifications
D
60-120
E
100-200
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V
EB
= -4V; I
C
= 0
I
C
= -1A; V
CE
= -5V
60
I
E
=0; V
CB
= -10V; f= 1MHz
I
E
= 0.5A; V
CE
= -5V
V
CB
= -100V; I
E
= 0
pF
MHz
160-320
isc Website：www.iscsemi.cn
2
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