Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 包装说明 | SMALL OUTLINE, R-PSSO-F3 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 2 A |
| 集电极-发射极最大电压 | 32 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 120 |
| JESD-30 代码 | R-PSSO-F3 |
| JESD-609代码 | e2 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | NPN |
| 功耗环境最大值 | 2 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN COPPER |
| 端子形式 | FLAT |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 10 |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 100 MHz |
| VCEsat-Max | 0.8 V |
| Base Number Matches | 1 |
| 2SD1766T100QR | 2SD1766T100/QR | 2SD1766T100/PQ | 2SD1766T100/PR | 2SD1766T100PR | 2SD1766T100PQ | |
|---|---|---|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, | 2A, 32V, NPN, Si, POWER TRANSISTOR | 2A, 32V, NPN, Si, POWER TRANSISTOR | 2A, 32V, NPN, Si, POWER TRANSISTOR | Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, | Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 包装说明 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 |
| Reach Compliance Code | compli | compli | compli | compli | compli | compli |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A |
| 集电极-发射极最大电压 | 32 V | 32 V | 32 V | 32 V | 32 V | 32 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 120 | 120 | 82 | 82 | 82 | 82 |
| JESD-30 代码 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 |
| JESD-609代码 | e2 | e2 | e2 | e2 | e2 | e2 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | 260 |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 端子面层 | TIN COPPER | TIN COPPER | TIN COPPER | TIN COPPER | TIN COPPER | TIN COPPER |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 10 | 10 | 10 | 10 | 10 | 10 |
| 晶体管应用 | AMPLIFIER | SWITCHING | SWITCHING | SWITCHING | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
| VCEsat-Max | 0.8 V | 0.8 V | 0.8 V | 0.8 V | 0.8 V | 0.8 V |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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