2SD1664
NPN Epitaxial Planar Transistors
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Features:
* Low V
CE(sat)
, V
CE(sat)
=0.15V(typical).(I
C
/I
B
=500mA/50mA)
SOT-89
ABSOLUTE MAXIMUM RATINGS (T
A
=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Limits
40
32
5.0
1.0
0.5
-55 to +150
-55 to +150
Unit
V
V
V
A
W
˚C
˚C
ELECTRICAL CHARACTERISTICS(T
A
=25˚C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
I
C
=50µA, I
E
=0
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
40
32
5
-
-
Typ
-
-
-
-
-
Max
-
-
-
0.5
0.5
Unit
V
V
V
µA
µA
Collector-Emitter Breakdown Voltage
I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage
I
E
=50µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
WEITRON
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11-Dec-08
2SD1664
ELECTRICAL CHARACTERISTICS
(T
A
=25˚C Unless otherwise noted)
Characteristic
ON CHARACTERISTICS
DC Current Gain
V
CE
=3V, I
C
=100mA
Collector-Emitter Saturation Voltage
I
C
=0.5A, I
B
=50mA
h
FE
V
CE(sat)
82
-
-
-
390
0.4
-
V
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Transition Frequency
V
CE
=5V, I
C
=50mA f=100MHz
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
CLASSIFICATION OF h
FE
Rank
Range
Marking
P
82-180
DAP
Q
120-270
DAQ
R
180-390
DAR
f
T
C
ob
-
-
150
15
-
-
MHz
pF
WEITRON
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2/5
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