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SHB681123E

产品描述HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
文件大小28KB,共2页
制造商SENSITRON
官网地址http://www.sensitron.com/
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SHB681123E概述

HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE

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SENSITRON
SEMICONDUCTOR
Technical Data
Datasheet 5015, Rev A
SHB681123E
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL
WAVE BRIDGE
DESCRIPTION:
2500-VOLT, 20 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
15000-VOLT HI-POT CAPABILITY
MAXIMUM RATINGS
RATING
PEAK INVERSE VOLTAGE
MAXIMUM DC OUTPUT CURRENT (With T
C
= 65
O
C) WHEN USED AS
A BRIDGE
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, T
C
= 25
O
C
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10μs, pulse) per leg, T
C
= 25
O
C
MAXIMUM POWER DISSIPATION, T
C
= 25
O
C
MAXIMUM THERMAL RESISTANCE, Junction to Case
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
ALL RATINGS ARE @ T
C
= 25
°C
UNLESS OTHERWISE SPECIFIED.
SYMBOL
PIV
I
O
I
FRM
I
FSM
P
d
R
θJC
Top, Tstg
MAX.
2500
20
80
250
400
0.2
-55 to
+200
UNITS
Volts
Amps
Amps
Amps
W
°C/W
°C
*
Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
MAXIMUM FORWARD VOLTAGE DROP (I
f
= 20A PER LEG)V
f
T
J
=25
°C
T
J
=150
°C
MAXIMUM REVERSE CURRENT (2500V PIV PER LEG) I
r
MAXIMUM JUNCTION CAPACITANCE (V
r
=5V) per leg
T
J
= 25
°C
T
J
= 150
°C
C
T
TYP
5.0
7.5
0.05
0.10
700
60
N/A
MAX.
5.50
9.00
0.40
2.00
mA
pF
nC
Volts
UNITS
TOTAL CAPACITANCE CHARGE (V
R
=2500V, I
F
=5A, di/dt=500A/μs and
T
J
=25°C) Q
C
per leg
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-mail Address - sales@sensitron.com

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