DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3919
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3919 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3919
2SK3919-ZK
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
•
Low on-state resistance
R
DS(on)1
= 5.6 mΩ MAX. (V
GS
= 10 V, I
D
= 32 A)
•
Low C
iss
: C
iss
= 2050 pF TYP.
•
5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
25
±20
±64
±256
36
1.0
150
−55
to +150
27
73
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Single Avalanche Energy
Note2
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 12.5 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17078EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2004
2SK3919
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 25 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 32 A
V
GS
= 5.0 V, I
D
= 16 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 12.5 V, I
D
= 32 A
V
GS
= 10 V
R
G
= 10
Ω
MIN.
TYP.
MAX.
10
±100
UNIT
µ
A
nA
V
S
2.0
9.7
2.5
19
4.5
6.8
2050
460
330
16
19
53
22
3.0
Drain to Source On-state Resistance
5.6
13.7
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 20 V
V
GS
= 10 V
I
D
= 64 A
I
F
= 64 A, V
GS
= 0 V
I
F
= 64 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
42
8
15
0.97
23
11
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D17078EJ4V0DS
2SK3919
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
P
T
- Total Power Dissipation - W
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
100
80
60
40
20
0
T
C
- Case Temperature -
°C
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
I
D
- Drain Current - A
100
I
D(DC)
PW = 100
µs
10
R
DS(on)
Limited
(at V
GS
= 10 V)
1
Power Dissipation Limited
1 ms
10 ms
T
C
= 25°C
Single pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
°C/W
1000
R
th(ch-A)
= 125°C/W
100
10
R
th(ch-C)
= 3.47°C/W
1
0.1
Single pulse
0.01
100
µ
1m
10 m
100 m
1
PW - Pulse Width - s
10
100
1000
Data Sheet D17078EJ4V0DS
3
2SK3919
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
300
250
I
D
- Drain Current - A
1000
100
10
1
0.1
200
150
100
V
GS
= 10 V
5.0 V
50
Pulsed
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
T
ch
=
−55°C
25°C
75°C
125°C
150°C
V
DS
= 10 V
Pulsed
0
1
2
3
4
5
6
0.01
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
V
GS(off)
- Gate Cut-off Voltage - V
100
V
DS
= 10 V
I
D
= 1 mA
3
10
T
ch
=
−55°C
25°C
75°C
125°C
150°C
2
1
V
DS
= 10 V
Pulsed
0.1
0.1
1
10
100
I
D
- Drain Current - A
1
0
-100
-50
0
50
100
150
200
T
ch
- Channel Temperature -
°C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
15
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
15
Pulsed
10
V
GS
= 5.0 V
10
5
10 V
5
I
D
= 32 A
0
1
10
100
1000
I
D
- Drain Current - A
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
4
Data Sheet D17078EJ4V0DS
2SK3919
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
8
6
4
2
0
-100
V
GS
= 10 V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10000
C
iss
1000
C
oss
V
GS
= 0 V
f = 1 MHz
100
0.01
0.1
1
C
rss
I
D
= 32 A
Pulsed
-50
0
50
100
150
200
10
100
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
30
25
20
15
10
5
0
100
t
d(on)
10
t
r
t
f
t
d(off)
V
DD
= 20 V
12.5 V
5V
V
GS
10
8
6
4
1
0.1
1
V
DD
= 12.5 V
V
GS
= 10 V
R
G
= 10
Ω
10
100
V
DS
2
0
0
20
Q
G
- Gate Charge - nC
40
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
1
0.1
Pulsed
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
1000
V
GS
= 10 V
di/dt = 100 A/µs
V
GS
= 0 V
100
0V
10
1
1
10
I
F
- Diode Forward Current - A
100
Data Sheet D17078EJ4V0DS
5
V
GS
- Gate to Source Voltage - V
I
D
= 64 A, 42 A (at V
DD
= 5 V)
12
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