Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1188
TRANSISTOR (PNP)
SOT-89
1. BASE
FEATURES
Power dissipation
P
CM
:
0.5
Collector current
-2
I
CM:
Collector-base voltage
V
(BR)CBO
:
-40
W (Tamb=25℃)
A
1
2. COLLECTOR
2
3. EMITTER
3
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain *
Collector-emitter saturation voltage *
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
Ce(sat)
Test
conditions
MIN
-40
-32
-5
-1
-1
82
390
-0.8
80
65
V
MHz
pF
MAX
UNIT
V
V
V
µA
µA
Ic=-50µA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-20 V , I
E
=0
V
EB
=-4 V ,
I
C
=0
V
CE
=-3V, I
C
= -0.5A
I
C
=-2A, I
B
= -0.2A
V
CE
=-5V,
I
C
=-0.5A ,f=30MHz
V
CB
=-10V, I
E
=0 ,f=1MHz
f
T
C
ob
*
Measured using pulse current.
CLASSIFICATION OF h
FE
Rank
Range
Marking
p
82-180
BCP
Q
120-270
BCQ
R
180-390
BCR
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