VISHAY
BYV98
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
\
Features
•
•
•
•
•
High reverse voltage
Glass passivated
Low reverse current
Low forward voltage drop
Hermetically sealed axial-leaded glass envelope
Applications
Switched-mode power supplies
High-frequency inverter circuits
949588
Mechanical Data
Case:
Sintered glass case, SOD 64
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
860 mg, (max. 1000 mg)
Parts Table
Part
BYV98-50
BYV98-100
BYV98-150
BYV98-200
Type differentiation
V
R
= 50 V; I
FAV
= 4 A
V
R
= 100 V; I
FAV
= 4 A
V
R
= 150 V; I
FAV
= 4 A
V
R
= 200 V; I
FAV
= 4 A
SOD64
SOD64
SOD64
SOD64
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Peak forward surge current
Average forward current
Junction and storage temperature range
Non repetitive reverse avalanche energy
I
(BR)R
= 1 A
t
p
= 10 ms, half-sinewave
T
amb
= 30 °C, l = 10 mm
Sub type
BYV98-50
BYV98-
100
BYV98-
150
BYV98-
200
Symbol
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
I
FSM
I
FAV
Value
50
100
150
200
70
4
Unit
V
V
V
V
A
A
°C
mJ
T
j
= T
stg
- 55 to +
175
E
R
20
Document Number 86046
Rev. 5, 07-Jan-03
www.vishay.com
1
BYV98
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
Lead length l = 10 mm, T
L
=
constant
Sub type
Symbol
R
thJA
Value
25
VISHAY
Unit
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Reverse breakdown voltage
I
F
= 5 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
R
= 100
µA
I
R
= 100
µA
I
R
= 100
µA
I
R
= 100
µA
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
BYV98-50
BYV98-100
BYV98-150
BYV98-200
Test condition
Sub type
Symbol
V
F
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
60
120
170
220
35
Min
Typ.
Max
1.1
10
200
Unit
V
µA
µA
V
V
V
V
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
120
P
R
– Reverse Power Dissipation ( mW )
1000
V
R
= V
RRM
BYV98–200
BYV98–150
BYV98–100
BYV98–50
I
R
– Reverse Current (
m
A )
V
R
= V
RRM
100
80
60
40
20
0
25
R
thJA
=
25K/W
70K/W
150K/W
100
10
1
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
175
15785
25
15784
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
175
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 2. Max. Reverse Current vs. Junction Temperature
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2
Document Number 86046
Rev. 5, 07-Jan-03
BYV98
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 86046
Rev. 5, 07-Jan-03
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