Transys
Electronics
L I M I T E D
TO-92L Plastic-Encapsulated Transistors
2SA935
FEATURES
Power dissipation
P
CM
: 0.75
W (Tamb=25℃)
TO-92L
TRANSISTOR (PNP)
1.
EMITTER
2.
COLLECTOR
3.
BASE
Collector current
: -0.7
A
I
CM
Collector-base voltage
V
(BR)CBO
: -80 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
123
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-50
µA,
I
E
=0
Ic=
-2
mA, I
B
=0
I
E
=
-50
µA,
I
C
=0
V
CB
=
-50
V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=
-3
V, I
C
=
-100
mA
I
C
=
-500
mA, I
B
=
-50
mA
V
CE
=
-10
V, I
C
=
-50
mA
V
CB
=
-10
V, I
E
=0, f=
1
MHz
-80
-80
-5
-0.5
-0.5
82
390
-0.4
100
20
µA
µA
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
P
82-180
Q
120-270
R
180-390
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