2SC2411K
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
32V, 0.5A
Medium Power Transistor
3. C ollector
FEATURES
.
High I
.
Low V
2. B as e
CMax
( = 0.5mA).
1.E mitter
CE(sat)
.
Optimal for low voltage operation.
.
Epitaxial planar type.
.
NPN silicon transistor.
A
L
3
Top View
SC-59
Dim
A
B
C
D
D
Min
2.70
1.30
1.00
0.35
1.70
0.00
0.10
0.20
1.25
2.25
Max
3.10
1.70
1.30
0.50
2.30
0.10
0.26
0.60
1.65
3.00
S
2
B
1
MECHANICAL DATA
.
Case: SC-59, Molded Plastic
.
Terminals: Solderable per MIL-STD-202,
Method 208
G
H
C
J
K
G
.
Polarity: See Diagrams Below
.
Weight: 0.008 grams (approx.)
.
Mounting Position: Any
J
K
L
S
H
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS
Rating 25 ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Temperature
Storage Temperature Range
Note: P
C
must not be exceeded.
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
LIMITS
40
32
5
0.5
0.2
150
-55 ~ +150
UNIT
V
V
V
A
(Note)
W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
2SC2411K
Elektronische Bauelemente
32V, 0.5A
Medium Power Transistor
ELECTRICAL CHARACTERISTICS (Ta = 25
TYPE NUMBER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
Cob
Min.
40
32
5
-
-
-
82
-
-
)
Typ.
-
-
-
-
-
-
-
250
6.0
Max.
-
-
-
1
1
0.4
390
-
-
UNIT
V
V
V
µA
µA
V
-
MHz
pF
TEST CONDITIONS
I
C
= 100 µA
I
C
= 1 mA
I
E
= 100 µA
V
CB
= 20 V
V
EB
= 4 V
I
C
/ I
B
= 500 mA / 50 mA
V
CE
= 3 V, I
C
= 100 mA
V
CE
= 5 V, I
E
= -20 mA,
f = 100 MHz
V
CB
= 10 V, I
E
= 0 A,
f = 1 MHz
h
FE
VALUES ARE CLASSIFIED AS FOLLOWS:
ITEM
h
FE
Marking
P
82 ~ 180
CP
Q
120 ~ 270
CQ
R
180 ~ 390
CR
ELECTRICAL CHARACTERISTIC CURVES
1000
500
C O LLE C T O R C UR R E NT : I
C
(
mA)
C O LLE C T O R C UR R E NT : I
C
(
mA)
V
C E
=
6V
C O LLE C T O R C UR R E NT : I
C
(
mA)
100
Ta
=25
0
A
. 50m
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
A
0. 45m
A
0. 40m
500
Ta
=25
0 .3 5 mA
400
Ta
=
100
80
25
-
25
-
55
0 .3 0 mA
0 .2 5 mA
300
2mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
50
0. 20 mA
0.1 5mA
200
0.6mA
0.4mA
0.10mA
100
0.05mA
0
0
1
2
3
I
B
=0A
4
5
0.2mA
0
I
B
=0A
0
1
2
3
4
5
B AS E TO E MITTE R VOLTAG E : V
B E
(
V)
C OLLE C TOR TO E MITTE R VOLTAGE : V
C E
(V)
C OLLE C TOR TO E MITTE R VOLTAG E : V
C E
(
V)
Fig.1 Grounded emitter propagation
characteristics
F ig.2 G rounded emitter output
characteristics( )
F ig.3 G rounded emitter output
characteristics( )
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 3
2SC2411K
Elektronische Bauelemente
32V, 0.5A
Medium Power Transistor
C OLLE C TOR S ATUR ATION VOLTAG E : V
C E (sat)
(V)
1
T a
=25
l
C
/l
B
=10
DC C UR R E NT G AIN : h
F E
1000
V
C E
=3V
0.5
500
T a
=1
0 0
200
75
100
0.2
0.1
50
25
0
-25
-50
50
0.05
20
0.02
0.5
1
2
5
10
20
50 100 200
500 1000
10
0.1 0.2
0.5 1
2
5
10 20
50 100 200 5001000
C OLLE C T OR C UR R E NT : I
C
(
mA)
C OLLE C T OR C UR R E NT : I
C
(
mA)
Fig.4 C ollector-emitter saturation voltage
vs. collector current
Fig.5 DC current gain vs. collector current
500
C OLLE C TOR OUTP UT C AP AC ITANC E : C ob
(pF)
E MITTE R INP UT C AP AC ITANC E
: C ib
(pF)
T R ANS IT ION F R E QUE NC Y : f
T
(
MHz)
T a
=25
V
C E
=5V
50
T a
=25
f=1MHz
I
E
=0A
I
C
=0A
C ib
200
20
100
10
Co
b
5
50
0.5
1
2
5
10
20
50
2
0.5
1
2
5
10
20
50
E MIT T E R C UR R E NT : I
E
(
mA)
C OLLE C T OR T O B AS E V OLT AG E : V
C B
(
V )
E MIT T E R T O B AS E V OLT AG E
: V
E B
(V
)
Fig. 6 G ain bandwidth product vs.
emitter current
F ig.7
C ollector output capacitance vs .
collector-bas e voltage
E mitter input capacitance vs .
emitter-bas e voltage
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 3
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