Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1094
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SD1585
APPLICATIONS
・Ideal
for power supplies or variety
or in audio and other equipment
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
固电
IN
导½
半
PARAMETER
CONDITIONS
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
OR
UCT
ND
O
VALUE
-60
-60
-7
-3
-5
-0.6
UNIT
V
V
V
A
A
A
Collector current-peak
Base current
T
a
=25℃
2.0
W
15
150
-55~150
℃
℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-30mA; I
B
=0
I
C
=-2A ;I
B
=-0.2A
I
C
=-2A ;I
B
=-0.2A
V
CB
=-60V; I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-50mA ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
I
C
=-0.1A; V
CE
=-5V
f=1MHz ; V
CB
=-10V
20
40
MIN
-60
2SB1094
TYP.
MAX
UNIT
V
-1.5
-2.0
-10
-10
V
V
μA
μA
200
20
MHz
pF
固电
L
Collector output capacitance
导½
半
K
100-200
h
FE-2
Classifications
M
40-80
IN
60-120
ANG
CH
MIC
E SE
DUC
ON
70
OR
T
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1094
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:
±0.15
mm)
3
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