2SB1260
PNP Plastic-Encapsulate Transistor
SOT-89
1
1. BASE
2. COLLECTOR
3. EMITTER
2
3
C
ABSOLUTE MAXIMUM RATINGS (Ta=25
%
)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
I CP
Collector Power Dissipation
Junction Temperature, Storage Temperature
PC
T
j
, Tstg
Value
-80
-80
-5.0
1.0
2.0
0.5
150, -55 to +150
Unit
Vdc
Vdc
Vdc
Adc(DC)
Adc (Pulse)
W
%
C
Device Marking
2SB1260=ZL
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -50 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -50 µAdc, IC=0)
Collector Cutoff Current (VCB= -60 Vdc, IE=0)
Emitter Cutoff Current (VEB=-4.0 Vdc, IC =0)
1.FR-5=1.0 x 0.75 x 0.062 in.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
-80
-80
-5.0
-
-
Max
-
-
-
-1
-1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
WE ITR O N
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2SB1260
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC=-0.1 Adc, VCE=-3.0 Vdc)
Collector-Emitter Saturation Voltage
(IC=-500 mAdc, IB=-50mAdc)
Transition Frequency
(IC=-50 mAdc, VCE=-5.0 Vdc,f=30 MHz)
hFE
VCE(sat)
fT
82
-
-
-
-
390
-0.4
-
-
Vdc
MHz
80
CLASSIFICATION OF hFE
Item
Range
P
82-180
Q
120-270
R
180-390
WEITRON
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2SB1260
-1000
C OLLE C T OR C UR R E NT : I
C
(mA)
C OLLE C T OR C UR R E NT : I
C
(mA)
T a=25û
C
V
C E
=-5V
-1.0
T a=25û
C
-0.45mA
-100
-0.8
-0.4mA
-0.35mA
-0.3mA
-0.25mA
-0.2mA
-0.15mA
-0.1mA
-0.05mA
I
B
=0mA
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
-10
-0.6
-0.4
-0.2
0
0
-1
-0.1
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
B AS E T O E MIT T E R V OLT AG E : V
B E
(V )
C OLLE C T OR T O E MIT T E R V OLT AG E : V
C E
(V )
FIG.1 Grounded Emitter Propagation
Characteristics
1000
500
T a=25û
C
FIG.2
Grounded Emitter Output
Characteristics
T a=25û
C
C OLLE C TOR S ATUR ATION VOLTAG E : V
C E (sat)
(V)
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-1 -2
-5 -10 -20
-50 -100-200-500 -1000-2000
DC C UR R E NT G AIN : h
F E
200
100
50
V
C E
=-3V
-1V
I
C
/I
B
=20
10
20
10
-1 -2
-5 -10 -20
-50-100 -200 -500-1000-2000
C OLLE C T OR C UR R E NT : I
C
(mA)
C OLLE C T OR C UR R E NT : I
C
(mA)
FIG.3
DC Current Gain vs.
Collector Current
T a=25û
C
V
C E
=-5V
FIG.4
1000
500
200
100
50
20
10
5
2
Collector-Emitter Saturation
Voltage vs. Collector Current
T a=25û
C
f=1MHz
I
E
=0A
500
200
100
50
20
10
5
2
1
1
2
5
10 20
C OLLE C TOR OUTP UT C AP AC ITANC E : C ob (
pF )
1000
T R ANS IT ION F R E QUE NC Y : f
T
(MHz)
50 100 200
500 1000
1
-0.1 -0.2
-0.5 -1
-2
-5 -10 -20
-50 -100
E MIT T E R C UR R E NT : I
E
(mA)
C OLLE C T OR T O B AS E V OLT AG E : V
C B
(V )
FIG.5
Gain Bandwidth Product vs.
Emitter Current
FIG.6
Collector Output Capacitance
vs. Collector-Base Voltage
WEITRON
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2SB1260
E MIT T E R INP UT C AP AC IT ANC E : C ib
(pF )
1000
500
C OLLE C T OR C UR R E NT : I
C
(A)
T a=25û
C
f=1MHz
I
C
=0A
-2
I
C Max
. (P uls e)
-1 I
C Max
.
-0.5
DC
T a=25û
C
S ingle
nonrepetitive
puls e
*
P
W
200
100
50
0
=1
P
W
0
=1
s
0m
ms
-0.2
-0.1
20
10
-0.1
-0.05
-0.5
-1
-2
-5
-10
-20
-50 -100
-0.2
-0.5
-1
-2
-5
-10
E MIT T E R T O B AS E V OLT AG E : V
E B
(V )
C OLLE C T OR T O E MIT T E R
V OLT AG E : V
C E
(V )
FIG. 7 Emitter Input Capacitance
vs. Emitter-Base Voltage
FIG. 8 Safe Operating Area
WEITRON
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2SB1260
SOT-89 Outline Dimensions
unit:mm
SOT-89
E
G
A
J
C
H
K
L
B
D
Dim
A
B
C
D
E
G
H
J
K
L
Min
Max
1.600
1.400
0.520
0.320
0.560
0.360
0.440
0.350
4.600
4.400
1.800
1.400
2.600
2.300
4.250
3.940
1.500TYP
3.100
2.900
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