GS882Z18/36B(B/D)-xxxV
119-bump and 165-bump BGA
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• User-configurable Pipeline and Flow Through mode
• IEEE 1149.1 JTAG-compatible Boundary Scan
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 18M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119-bump BGA and 165-bump FPBGA
packages
• RoHS-compliant 119-bump and 165-bump BGA packages
available
9Mb Pipelined and Flow Through
Synchronous NBT SRAM
250 MHz–150 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
Functional Description
The GGS882Z18/36B(B/D)-xxxV may be configured by the
user to operate in Pipeline or Flow Through mode. Operating
as a pipelined synchronous device, in addition to the rising-
edge-triggered registers that capture input signals, the device
incorporates a rising edge triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS882Z18/36B(B/D)-xxxV is implemented with GSI's
high performance CMOS technology and is available in
JEDEC-standard 119-bump BGA and 165-bump FPBGA
packages.
m
The GS882Z18/36B(B/D)-xxxV is a 9Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
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en
de
Paramter Synopsis
-250
t
KQ
tCycle
3.0
4.0
195
220
5.5
5.5
155
175
d
fo
r
N
3.0
5.0
165
185
6.5
6.5
140
155
ew
-200
D
-150
3.8
6.7
140
160
7.5
7.5
128
145
ec
ot
R
Pipeline
3-1-1-1
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
Rev: 1.05a 2/2008
N
Flow Through
2-1-1-1
1/32
es
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Because it is a synchronous device, address, data inputs, and
read/write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.
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