电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

2SB1188-Q

产品描述Small Signal Bipolar Transistor
产品类别分立半导体    晶体管   
文件大小340KB,共2页
制造商SECOS
官网地址http://www.secosgmbh.com/
下载文档 详细参数 选型对比 全文预览

2SB1188-Q概述

Small Signal Bipolar Transistor

2SB1188-Q规格参数

参数名称属性值
Reach Compliance Codecompli
Base Number Matches1

文档预览

下载PDF文档
2SB1188
Elektronische Bauelemente
-2A, -40V
PNP Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The 2SB1188 is designed for medium poweramplifier applications.
SOT-89
4
1
2
FEATURES
Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
RoHS Compliant Product
B
3
C
A
E
D
F
G
H
K
J
L
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SB1188-P
82~180
BCP
2SB1188-Q
120~270
BCQ
2SB1188-R
180~390
BCR
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
LeaderSize
7’ inch
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
1.2
0.89
0
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
Ratings
-40
-32
-5
-2
Unit
V
V
V
A
W
°C
0.5 (2.0*)
150, -55~150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min.
-40
-32
-5
-
-
Typ.
-
-
-
-
-
-500
-
150
50
Max.
-
-
-
-1
-1
-800
390-
-
-
Unit
V
V
V
μA
μA
mV
MHz
pF
Test Conditions
IC=-50µA , IE=0
I
C
= -1mA, I
B
=0
I
E
= -50µA, I
C
=0
V
CB
= -20V, I
E
=0
V
EB
= -4V, I
C
=0
I
C
=--2A, I
B
= -200mA
V
CE
= -3V, I
C
= -500mA
V
CE
= -5V, I
C
= -500mA, f=30MHz
V
CB
= -10V, I
E
=0, f=1MHz
V
CE(sat)
h
FE
f
T
C
OB
-
82
-
-
Pulse Test: Pulse Width
380µs, Duty Cycle≦2%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Dec-2010
Rev. D
Page 1 of 2

2SB1188-Q相似产品对比

2SB1188-Q 2SB1188-R 2SB1188-P 2SB1188-P-C 2SB1188-Q-C 2SB1188-R-C 2SB1188-C
描述 Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Reach Compliance Code compli compli compli compli compli compli compli
Base Number Matches 1 1 1 1 1 1 -

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2236  1601  715  1791  1907  46  33  15  37  39 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved