2SB1188 / 2SB1182 / 2SB1240
Transistors
Medium power transistor (−32V,
−2A)
2SB1188 / 2SB1182 / 2SB1240
Features
1) Low V
CE(sat)
.
V
CE(sat)
=
−0.5V
(Typ.)
(I
C
/I
B
=
−2A
/
−0.2A)
2) Complements the 2SD1766 / 2SD1758 /
2SD1862.
External dimensions
(Unit : mm)
2SB1188
0.5±0.1
4.5
+0.2
−0.1
1.6±0.1
2SB1182
1.5
±
0.3
6.5
±
0.2
5.1
+0.2
−
0.1
2.3
+0.2
−
0.1
0.5
±
0.1
+
0.2
1.5
−0.1
C0.5
5.5
+0.3
−0.1
4.0±0.3
2.5
+
0.2
−0.1
(1)
(2)
(3)
0.4±0.1
1.5±0.1
1.0±0.2
0.4
+
0.1
−0.05
0.75
0.9
0.65
±
0.1
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.55
±
0.1
2.3
±
0.2 2.3
±
0.2
1.0
±
0.2
Structure
Epitaxial planar type
PNP silicon transistor
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol: BC
∗
2.5
±
0.2
2SB1240
6.8
±
0.2
0.65Max.
1.0
0.5
±
0.1
(1)
(2)
(3)
2.54 2.54
1.05
14.5
±
0.5
4.4
±
0.2
0.9
0.45
±
0.1
ROHM :
ATV
(1) Emitter
(2) Collector
(3) Base
∗
Denotes h
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
FE
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
−40
−32
−5
−2
−3
0.5
Unit
V
V
V
A(DC)
A (Pulse)
∗
1
W
W
2SB1188
Collector power
dissipation
P
C
2SB1182
2SB1240
2
10
1
∗
2
∗
3
W (Tc=25
°C
)
W
Junction temperature
Storage temperature
Tj
Tstg
150
−55
to 150
°C
°C
∗
1
∗
2
∗
3
Single pulse, Pw=100ms
When mounted on a 40
×
40
×
0.7 mm ceramic board.
Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Rev.A
2.5
9.5
±
0.5
0.9
1.5
1/3
2SB1188 / 2SB1182 / 2SB1240
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−40
−32
−5
−
−
−
82
−
−
Typ.
−
−
−
−
−
−0.5
−
100
50
Max.
−
−
−
−1
−1
−0.8
390
−
−
Unit
V
V
V
I
C
= −50µ
A
I
C
= −1mA
I
E
= −50µ
A
V
CB
= −20V
V
EB
= −4V
I
C
/I
B
= −2A/ −0.2A
V
CE
= −3V,
I
C
= −0.5A
V
CE
= −5V,
I
E
=0.5A,
f=100MHz
V
CB
= −10V,
I
E
=0A,
f=1MHz
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
µ
A
µ
A
V
−
MHz
pF
∗
∗
∗
Measured using pulse current.
Packaging specifications and h
FE
Package
Code
Type
2SB1188
2SB1182
2SB1240
h
FE
PQR
PQR
PQR
−
−
−
Basic ordering unit (pieces)
T100
1000
Taping
TL
2500
−
TV2
2500
−
−
h
FE
values are classified as follows :
Item
h
FE
P
82 to 180
Q
120 to 270
R
180 to 390
Electrical characteristic curves
V
CE
= −3V
COLLECTOR CURRENT : I
C
(mA)
−0.5
COLLECTOR
CURRENT : I
C
(A)
Ta=25°C
−
2.5mA
−
1.75mA
DC CURRENT GAIN : h
FE
−1000
Ta=100°C
25°C
−500
−40°C
−200
−100
−50
−20
−10
−5
−2
−1
−2
.25mA
500
Ta=25°C
−0.4
−
2mA
−
1.5mA
−
1.25mA
200
V
CE
= −6V
−3V
−1V
−0.3
−0.2
−
1mA
−
750
µ
A
−
500µA
100
50
−0.1
−
250µA
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
0
−0.4
−0.8
−1.2
I
B
=0A
−1.6
−2
20
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector curren ( )
Rev.A
2/3
2SB1188 / 2SB1182 / 2SB1240
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
500
Ta=100°C
25°C
−25°C
V
CE
= −3V
−500
Ta=25°C
−500
l
C
/l
B
=10
DC CURRENT GAIN : h
FE
200
−200
−200
−100
−50
100
−100
I
C
/I
B
=
50
Ta=100°C
25°C
−40°C
50
−50
20
10
−20
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
20
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current ( )
Fig.5 Collector-emitter saturation
voltage vs. collector current ( )
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25°C
−1
500
Ta
=
25°C
V
CE
= −5V
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
300
200
100
50
Cib
I
C
/I
B
=10
−0.5
Ta
=
25°C
f
=
1MHz
I
E
=
0A
I
C
=
0A
Cob
200
100
−0.2
−0.1
−0.05
20
10
50
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
5
10
20
50
100 200
500 1000 2000
−0.5
−1
−2
−5
−10
−20 −30
COLLETOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.8 Gain bandwidth product vs.
emitter current
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
−5
COLLECTOR CURRENT : I
C
(A)
I
C Max. (pulse)
COLLECTOR CURRENT : I
C
(A)
−5
−2
−1
−0.5
−0.2
−0.1
−0.05
I
C Max
. (Pulse)
DC
P
W
=500µs
−2
−1
−0.5
−0.2
−0.1
−0.05
Ta=25°C
∗Single
−0.02
nonrepetitive
pulse
−0.01
−0.1 −0.2 −0.5 −1
D
C
s
∗
0m
=
1
∗
Pw
s
m
00
=
1
Pw
P
W
=1ms
P
W
=100ms
−2
−5 −10 −20
−50
Ta=25°C
∗Single
−0.02
nonrepetitive
pulse
−0.01
−0.1 −0.2 −0.5 −1
−2
−5 −10 −20
−50
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.10 Safe operation area
(2SB1188)
Fig.11 Safe operation area
(2SB1182)
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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