电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

2SB1068-L

产品描述Small Signal Bipolar Transistor
产品类别分立半导体    晶体管   
文件大小81KB,共1页
制造商SECOS
官网地址http://www.secosgmbh.com/
下载文档 详细参数 选型对比 全文预览

2SB1068-L概述

Small Signal Bipolar Transistor

2SB1068-L规格参数

参数名称属性值
Reach Compliance Codecompli
Base Number Matches1

文档预览

下载PDF文档
2SB1068
Elektronische Bauelemente
-2A , -20V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
G
H
Low Collector Saturation Voltage
High DC Current Gain
High Collector Power Dissipation
Complementary of the 2SD1513
J
A
B
K
D
Emitter
Collector
Base
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
REF.
A
B
C
D
E
F
G
H
J
K
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
2SB1068-L
135~270
2SB1068-K
200~400
2SB1068-U
300~650
E
C
F
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
-20
-16
-6
-2
0.625
200
150, -55~150
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)
V
BE
C
cb
f
T
Min
-20
-16
-6
-
-
135
100
-
-
-
-
-0.55
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
-
60
-
Max
-
-
-
-0.1
-0.1
650
-
-0.4
-0.5
-0.5
-1.2
-0.65
-
-
Unit
V
V
V
μA
μA
Test condition
I
C
= -0.1mA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -0.1mA, I
C
=0
V
CB
= -16V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
= -2V, I
C
= -0.1A
V
CE
= -2V, I
C
= -1.5A
V
V
V
V
V
pF
MHz
I
C
= -1A, I
B
= -10mA
I
C
= -1.5A, I
B
= -20mA
I
C
= -1.5A, I
B
= -75mA
I
C
= -1.5A, I
B
= -75mA
V
CE
= -6V, I
C
= -5mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -10V, I
C
= -50mA
Any changes of specification will not be informed individually.
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter voltage
Collector-Base Capacitance
Transition Frequency
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Page 1 of 1

2SB1068-L相似产品对比

2SB1068-L 2SB1068-K 2SB1068-U 2SB1068-K-C 2SB1068-C 2SB1068-U-C 2SB1068-L-C
描述 Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Reach Compliance Code compli compli compli compli compli compli compli
Base Number Matches 1 1 1 1 1 1 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2914  2262  2796  2636  1301  59  46  57  54  27 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved