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GS882Z36CGB-150IT

产品描述ZBT SRAM, 256KX36, 7.5ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119
产品类别存储    存储   
文件大小484KB,共34页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
标准  
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GS882Z36CGB-150IT概述

ZBT SRAM, 256KX36, 7.5ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119

GS882Z36CGB-150IT规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称GSI Technology
零件包装代码BGA
包装说明BGA,
针数119
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
最长访问时间7.5 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码R-PBGA-B119
JESD-609代码e1
长度22 mm
内存密度9437184 bit
内存集成电路类型ZBT SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量119
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256KX36
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.77 mm
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1.27 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm

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GS882Z18/36CB/D-xxxI
119-bump and 165-bump BGA
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 18M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119-bump BGA and 165-bump FPBGA
packages
• RoHS-compliant 119-bump and 165-bump BGA packages
available
9Mb Pipelined and Flow Through
Synchronous NBT SRAM
Functional Description
333 MHz–150 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
The GS882Z18/36C882Z18C is a 9Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS882Z18/36C may be configured by the user to operate
in Pipeline or Flow Through mode. Operating as a pipelined
synchronous device, in addition to the rising-edge-triggered
registers that capture input signals, the device incorporates a
rising edge triggered output register. For read cycles, pipelined
SRAM output data is temporarily stored by the edge-triggered
output register during the access cycle and then released to the
output drivers at the next rising edge of clock.
The GS882Z18/36C is implemented with GSI's high
performance CMOS technology and is available in JEDEC-
standard 119-bump BGA and 165-bump FPBGA packages.
Parameter Synopsis
-333I
Pipeline
3-1-1-1
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
2.5
3.0
260
300
4.5
4.5
200
225
-300I
2.5
3.3
245
280
5.0
5.0
185
210
-250I
2.5
4.0
215
245
5.5
5.5
180
200
-200I
3.0
5.0
190
215
6.5
6.5
160
180
-150I
3.8
6.7
160
180
7.5
7.5
148
165
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Flow Through
2-1-1-1
Rev: 1.05 7/2012
1/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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