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“Standard”:
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DATA SHEET
SILICON POWER TRANSISTOR
2SC2690,2690A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW/HIGH FREQUENCY POWER AMPLIFICATION
DESCRIPTION
These products are general purpose transistors designed for use
in audio and radio frequency power amplifiers.
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±0.2
3.8 ±0.2
2.8 MAX.
FEATURES
•
Suitable for use in driver stage of 50 to 100 W audio amplifiers
and output stage of TV vertical deflection circuit.
•
High voltage and high f
T
V
CEO
= 120 V (2SC2690) / 160 V (2SC2690A)
f
T
= 175 MHz (V
CE
= 5.0 V, I
C
= 0.2 A)
•
Complementary to the 2SA1220 and 2SA1220A PNP transistors.
1 2
12 TYP.
3
2.5 ±0.2
13.0 MIN.
12.0 MAX.
ORDERING INFORMATION
PART NUMBER
2SC2690
2SC2690-AZ
2SC2690A
2SC2690A-AZ
Note
Note
0.55
+0.08
–0.05
PACKAGE
0.8
+0.08
–0.05
TO-126 (MP-5)
TO-126 (MP-5)
TO-126 (MP-5)
TO-126 (MP-5)
1.2 TYP.
2.3 TYP.
2.3 TYP.
1. Emitter
2. Collector
3. Base
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
2SA2690
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
Note
2SA2690A
160
160
5.0
1.2
2.5
0.3
1.2
20
150
V
V
V
A
A
A
W
W
°C
°C
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
P
T
T
j
T
stg
120
120
−55
to +150
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17501EJ2V0DS00 (2nd edition)
(Previous No. TC-3586)
Date Published March 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1984
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