UNISONIC TECHNOLOGIES CO.,
2SC4617
GENERAL PURPOSE
TRANSISTOR
FEATURES
* Low Cob
Cob=2.0pF (typ)
* Complements the UTC 2SA1774
NPN EPITAXIAL SILICON TRANSISTOR
2
1
MARKING
3
C5
SOT-23
*Pb-free plating product number: 2SC4617L
PIN CONFIGURATION
PIN NO.
PIN NAME
1
Emitter
2
Base
3
Collector
ORDERING INFORMATION
Order Number
Normal
Lead free
2SC4617-AE3-R 2SC4617L-AE3-R
Package
SOT-23
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R206-081,A
2SC4617
PARAMETER
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
DC Collector Current
Power Dissipation
Operating Temperature
Storage Temperature
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
RATINGS
60
50
7
150
150
+150
-40 ~ +150
UNIT
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
TEST CONDITIONS
I
C
= 50μA
I
C
= 1mA
I
E
=50μA
V
CB
=60V
V
EB
= 7V
V
CE
=6V,Ic=1mA
I
C
=50mA, I
B
=5mA
V
CE
=12V, I
E
= -2mA, f=100MHz
V
CE
= 12V, I
E
= 0A, f=1MHz
MIN
60
50
7
TYP
MAX
UNIT
V
V
V
μA
μA
V
MHz
pF
120
180
2
0.1
0.1
560
0.4
3.5
CLASSIFICATION OF hFE
RANK
RANGE
Q
120 ~ 270
R
180 ~ 390
S
270 ~ 560
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R206-081,A
2SC4617
■
TYPICAL CHARACTERICS
NPN EPITAXIAL SILICON TRANSISTOR
Grounded emitter propagation characteristics
COLLECTOR CURRENT, I
C
(mA)
50
20
10
5
2
1
0.5
0.2
0.1
Ta=100℃
25℃
V
CE
= 6V
Grounded emitter output characteristics (Ι)
COLLECTOR CURRENT, I
C
(mA)
100
Ta = 25℃
80
60
0.20mA
0.50mA
A
0 .45 m
.40 mA
0
0.35mA
0.30mA
0.25mA
40
20
0
0
0.4
0.8
1.2
0.15mA
0.10mA
0.05mA
I
B
= 0A
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE, V
BE
(V)
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE, V
CE
(V)
Grounded emitter output characteristics (¢º)
10
Ta = 25℃
30μA
27
μA
24
μA
21
μA
18
μA
15
μA
DC current gain vs. collector current (Ι)
500
Ta = 25℃
V
CC
= 5V
3V
1V
COLLECTOR CURRENT, I
C
(mA)
8
6
4
DC CURRENT GAIN, h
FE
16
20
200
100
50
12
μA
9μ A
6μA
3μA
20
10
0.2 0.5 1
2
0
0
4
8
I
B
=
0A
12
2
5 10 20
60 100 200
COLLECTOR TO EMITTER VOLTAGE, V
CE
(V)
COLLECTOR CURRENT, I
C
(mA)
DC current gain vs. collector current (Ⅱ)
500
Ta = 100℃
25℃
V
CC
= 5V
0.5
Collector-emitter saturation voltage vs.
collector current
Ta = 25℃
COLLECTOR SATURATION
VOLTAGE, V
CE(sat)
(V)
DC CURRENT GAIN, h
FE
200
100
50
0.2
0.1
0.05
0.02
0.01
0.2 0.5 1
I
C
/I
B
= 5V
20
10
20
10
0.2 0.5 1
2
5 10 20
60 100 200
2
5 10
20
50 100 200
COLLECTOR CURRENT, I
C
(mA)
COLLECTOR CURRENT, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R206-081,A
2SC4617
TYPICAL CHARACTERICS(cont.)
Collector-emitter saturation voltage vs.
collector current (Ι)
0.5
NPN EPITAXIAL SILICON TRANSISTOR
Collector-emitter saturation voltage vs.
collector current (Ⅱ)
0.5
I
C
/I
B
= 50
Ta = 100℃
25℃
COLLECTOR SATURATION
VOLTAGE, V
CE(sat)
(V)
0.2
0.1
0.05
0.02
0.01
0.2 0.5 1
5 10 20 50 100 200
2
COLLECTOR CURRENT, I
C
(mA)
Ta = 100℃
25℃
COLLECTOR SATURATION
VOLTAGE, V
CE(sat)
(V)
I
C
/I
B
= 10
0.2
0.1
0.05
0.02
0.01
0.2
0.5 1
2
5 10
20
50 100
COLLECTOR CURRENT, I
C
(mA)
Collector output capacitance vs collector-base voltage
.
Emitter input capacitance vs. emitter-base voltage
COLLECTOR OUTPUT CAPACITANCE, C
ob
(pF)
EMITTER INPUT CAPACITANCE, C
ib
(pF)
Gain bandwidth product vs emitter current
.
TRANSITION FREQUENCY, f
T
(MHz)
Ta = 25℃
500 V
CE
=6V
20
10
C
ib
Ta=25℃
f=1MHz
I
E
=0A
I
C
=0A
200
5
100
2
C
ob
50
-0.5 -1
1
1
2
0.2 0.5
5 10 20
50
COLLECTOR TO BASE VOLTAGE , V
CB
(V)
EMITTER TO BASE VOLTAGE , V
EB
(V)
-2
-5
-10 -20
-50 -100
COLLECTOR CURRENT I
E
(mA)
,
BASE COLLECTOR TIME CONSTANT,
Cc'rbb' (ps)
Base-collector time constant
vs. emitter current
200
100
50
Ta=25℃
f=32MHZ
V
CB
=6V
20
10
-0.2
-0.5
-1
-2
-5
-10
EMITTER CURRENT, I
E
(mA)
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R206-081,A
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