CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
General Purpose NPN Transistor
VOLTAGE 50 Volts
APPLICATION
* Small Power Amplifier .
2SC4617GP
CURRENT 0.15 Ampere
FEATURE
* Surface mount package. (SC-75/SOT-416)
* Low saturation voltage V
CE(sat)
=0.4V(max.)(I
C
=50mA)
* Low cob. Cob=2.0pF(Typ.)
* P
C
= 150mW (Collector power dissipation).
(3)
(2)
SC-75/SOT-416
CONSTRUCTION
* NPN Silicon Transistor
* Epitaxial planner type
0.23~0.33
(1)
0.5
1.5~1.7
0.75~0.95
MARKING
* hFE(Q): UX
* hFE(R): UY
* hFE(S): UZ
0.6~0.8
0.1~0.2
CIRCUIT
(1)
B
C
(3)
1.5~1.7
E
(2)
Dimensions in millimeters
SC-75/SOT-416
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Collector Power Dissipation
Storage Temperature
Junction Temperature
T
A
≤
25
O
C
CONDITION
Open Emitter
Open Base
Open Collector
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
TOT
T
STG
T
J
MIN.
-
-
-
-
-
-55
-
MAX.
60
50
7
150
150
+150
+150
UNITS
Volts
Volts
Volts
mAmps
mW
o
C
C
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2003-12
RATING CHARACTERISTICS ( 2SC4617GP )
ELECTRICAL CHARACTERISTICS
( At T
A
= 25 C unless otherwise noted )
PARAMETERS
Collector Cut-off Current
Emitter Cut-off Current
CONDITION
I
E
=0; V
CB
=60V
I
C
=0; V
EB
=7V
V
CE
=6V; Note 1
I
C
=1mA;
Note 2
SYMBOL
I
CBO
I
CEO
MIN.
-
-
TYPE
-
-
MAX.
0.1
0.1
UNITS
uA
uA
o
DC Current Gain
h
FE
120
-
560
Collector-Emitter Saturation
Voltage
Collector-Emitter Breakdown
Voltage
Output Collector Capacitance
Transition Frequency
I
C
=50mA; I
B
=5mA
I
C
=1mA
I
E
=ie=0; V
CB
=12V;
f=1MHz
I
E
=-2mA; V
CE
=12V;
f=100MHz
V
CEsat
V
CEO
C
ob
f
T
-
50
-
-
-
-
2.0
180
0.4
Volts
Volts
pF
MHz
-
3.5
-
Note :
1. Pulse test: tp
≤
300uSec;
δ ≤
0.02.
2. h
FE:
Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560
RATING CHARACTERISTIC CURVES ( 2SC4617GP )
Fig.1
50
COLLECTOR CURRENT : I
C
(mA)
Grounded emitter propagation
characteristics
V
CE
=6V
Ta=100
O
C
COLLECTOR CURRENT : I
C
(mA)
Fig.2
100
Grounded emitter output
characteristics (1)
0.50mA
COLLECTOR CURRENT : I
C
(mA)
Fig.3
10
Ta=25°C
Grounded emitter output
characteristics (2)
30µA
27µA
Ta=25°C
20
10
5
80
mA
0.45
A
0.40m
0.35mA
8
24µA
21µA
0.30mA
25
°C
−5
5°C
60
0.25mA
0.20mA
6
18µA
15µA
2
1
40
0.15mA
0.10mA
4
12µA
9µA
0.5
25
O
C
55
O
C
20
0.05mA
I
B
=0A
2
6µA
3µA
0.2
0.1
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
0.4
0.8
1.2
1.6
2.0
0
0
4
8
I
B
=0A
12
16
20
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
RATING CHARACTERISTIC CURVES ( 2SC4617GP )
Fig.4 Collector-emitter saturation voltage
vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.5 DC current gain vs.
collector current
0.5
I
C
/I
B
=50
TRANSITION FREQUENCY : f
T
(MHz)
Fig. 6 Gain bandwidth product
vs. emitter current
500
0.5
I
C
/I
B
=10
Ta=25°C
V
CE
=6V
DC CURRENT GAIN : h
FE
0.2
Ta=100°C
25°C
−55°C
0.2
0.1
Ta=100°C
25°C
−55°C
0.1
0.05
200
0.05
0.02
100
0.02
0.01
0.01
0.2
0.5 1
2
5
10
20
50 100 200
0.2
0.5 1
2
5
10
20
50 100
50
−0.5 −1
−2
−5
−10 −20
−50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
