UTC 2SC4617
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
FEATURES
* Low Cob
Cob=2.0pF (typ)
* Complements the UTC 2SA1774
MARKING
C5
1
2
3
SOT-523
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Pc
T
j
T
STG
RATINGS
60
50
7
0.15
0.15
150
-55 ~ +150
UNIT
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified.)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
Cob
TEST CONDITIONS
Ic= 50μA
Ic= 1mA
I
E
=50μA
V
CB
=60V
V
EB
= 7V
V
CE
=6V,Ic=1mA
Ic=50mA, I
B
=5mA
V
CE
=12V, I
E
= -2mA, f=100MHz
V
CE
= 12V, I
E
= 0A, f=1MHz
MIN
60
50
7
TYP
MAX
UNIT
V
V
V
μA
μA
V
MHz
pF
120
180
2
0.1
0.1
560
0.4
3.5
CLASSIFICATION OF hFE
RANK
RANGE
Q
120 ~ 270
R
180 ~ 390
S
270 ~ 560
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R221-010,A
UTC 2SC4617
NPN EPITAXIAL SILICON TRANSISTOR
Grounded emitter output characteristics (
Ι)
COLLECTOR CURRENT, I
C
(mA)
100
ELECTRICAL CHARACTERISTICS CURVES
Grounded emitter propagation characteristics
COLLECTOR CURRENT, I
C
(mA)
50
20
10
5
2
1
0.5
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
CE
= 6V
Ta = 25℃
80
60
40
20
0
0
0.4
0.8
0.50mA
mA
0.45
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
B
= 0A
25℃
Ta=100℃
55℃
1.2
1.6
2.0
BASE TO EMITTER VOLTAGE, V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE, V
CE
(V)
Grounded emitter output characteristics (Ⅱ )
10
DC current gain vs. collector current (
Ι)
500
Ta = 25℃
30μA
27μA
24μA
21μA
18μA
15μA
12μA
9μA
6μA
3μA
Ta = 25℃
V
CC
= 5V
3V
1V
COLLECTOR CURRENT, I
C
(mA)
8
6
4
DC CURRENT GAIN, h
FE
16
20
200
100
50
20
10
0.2
2
0
I
B
= 0A
0
4
8
12
0.5 1
2
5 10 20
60 100 200
COLLECTOR TO EMITTER VOLTAGE, V
CE
(V)
COLLECTOR CURRENT, I
C
(mA)
DC current gain vs. collector current (Ⅱ)
500
Collector-emitter saturation voltage vs.
collector current
0.5
Ta = 100℃
25℃
-55℃
V
CC
= 5V
COLLECTOR SATURATION
VOLTAGE, V
CE(sat)
(V)
Ta = 25℃
DC CURRENT GAIN, h
FE
200
100
50
0.2
0.1
0.05
0.02
0.01
0.2
I
C
/I
B
= 5V
20
10
20
10
0.2
0.5 1
2
5 10 20
60 100 200
0.5 1
2
5 10
20
50 100 200
COLLECTOR CURRENT, I
C
(mA)
COLLECTOR CURRENT, I
C
(mA)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R221-010,A
UTC 2SC4617
NPN EPITAXIAL SILICON TRANSISTOR
Collector-emitter saturation voltage vs.
collector current (Ⅱ)
0.5
Collector-emitter saturation voltage vs.
collector current (Ι)
0.5
COLLECTOR SATURATION
VOLTAGE, V
CE(sat)
(V)
COLLECTOR SATURATION
VOLTAGE, V
CE(sat)
(V)
I
C
/I
B
= 10
I
C
/I
B
= 50
Ta = 100℃
25℃
-55℃
0.2
0.1
0.05
0.02
0.01
0.2
5 10 20 50 100 200
0.5 1
2
COLLECTOR CURRENT, I
C
(mA)
0.2
0.1
0.05
Ta = 100℃
25℃
-55℃
0.02
0.01
0.2
0.5 1
2
5 10
20
50 100
COLLECTOR CURRENT, I
C
(mA)
Collector output capacitance vs. collector-base voltage
Emitter input capacitance vs. emitter-base voltage
COLLECTOR OUTPUT CAPACITANCE, C
ob
(pF)
EMITTER INPUT CAPACITANCE, C
ib
(pF)
Gain bandwidth product vs. emitter current
TRANSITION FREQUENCY, f
T
(MHz)
Ta = 25℃
500
V
CE
=6V
20
10
C
ib
Ta=25℃
f=1MHz
I
E
=0A
I
C
=0A
200
5
100
2
1
0.2
0.5
1
2
5
C
ob
50
-0.5 -1
-2
-5
-10
-20
-50 -100
10
20
50
COLLECTOR CURRENT, I
E
(mA)
COLLECTOR TO BASE VOLTAGE , V
CB
(V)
EMITTER TO BASE VOLTAGE , V
EB
(V)
BASE COLLECTOR TIME CONSTANT,
Cc'rbb' (ps)
Base-collector time constant
vs. emitter current
200
100
50
20
10
-0.2
-5
-1
-2
EMITTER CURRENT, I
E
(mA)
-0.5
-10
Ta=25℃
f=32MHZ
V
CB
=6V
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R221-010,A
UTC 2SC4617
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
4
QW-R221-010,A
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
