SMP1000G-JQ
MECHANICAL DATA
Dimensions in mm.
P.I.N. PHOTODIODE
FEATURES
•
•
•
•
•
•
•
•
HIGH SENSITIVITY
EXCELLENT LINEARITY
LOW NOISE
WIDEST SPECTRAL RESPONSE
ENHANCED UV SENSITIVITY
INTEGRAL OPTICAL FILTER OPTION note 1
TO8 HERMETIC METAL CAN PACKAGE
EMI SCREENING MESH AVAILABLE
Ø 15.25
Ø 14.0
Ø 0.45
LEAD
20 nom.
5.5
Note 1 Contact Semelab Plc for filter options
10.16
DESCRIPTION
The SMP1000G-JQ is a large Silicon P.I.N. photodiode
incorporated in a hermetic metal can package. The
package window has greater ultra-violet light transmission,
thus extending the useful spectral range of the device. The
electrical terminations are via two leads of diameter 0.018"
on pitch of 0.2". The cathode of the photodiode is
electrically connected to the package.
The larger photodiode active area provides greater
sensitivity than the SMP900 range of devices, with a
corresponding reduction in speed. The photodiode
structure has been optimised for high sensitivity, light
measurement applications across the infra-red to ultra-
violet spectrum. Inclusion of a suitable optical filter into the
package can produce a device that responds only to ultra-
violet light. The metal can and optional screening mesh
ensure a rugged device with a high degree of immunity to
radiated electrical interference.
2
1
Standard TO-8
Pin 1 – Anode
Pin 2 – Cathode & Case
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
-40°C to +70°C
-45°C to +80°C
0.35% per °C
x2 per 8°C rise
60V
Prelim. 1/98
SMP1000G-JQ
CHARACTERISTICS
(Tamb=25°C unless otherwise stated)
Characteristic
Test Conditions.
Responsively
Active Area
Dark Current
Breakdown Voltage
Capacitance
E = 0 Dark
E = 0 Dark
E = 0 Dark
E = 0 Dark
E = 0 Dark
30V Reverse
50Ω
900nm
Directional characteristics
Min.
0.45
Typ.
0.55
76.85
Max.
Units
A/W
mm
2
λ
at 900nm
1V Reverse
10V Reverse
10µA Reverse
0V Reverse
20V Reverse
60
8
16
80
800
150
16
28x10
-14
9
38
nA
V
735
pF
Rise Time
NEP
ns
0.45
W/√Hz
Directional Characteristics
1
80°
70°
Angle from sensor
to illumination
1
0.9
0.8
60°
0.8
50°
0.6
40°
30°
Normalised Incident Power
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.4
20°
0.2
10°
0
0
0.2
0.4
0.6
0.8
1
Normalised incident power
0
0
10
20
30
40
50
60
70
80
90
Angle from sensor to illumination
Spectral Response
100
Relative Responsivity (%)
80
60
40
20
0
0
200
400
600
Wavelength (nm)
800
1000
1200
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/98
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