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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1581
SWITCHING
N-CHANNEL MOS FET
DESCRIPTION
The 2SK1581, N-channel vertical type MOS FET, can be
driven by 2.5 V power supply.
As the 2SK1581 is driven by low voltage and does not require
consideration of driving current, it is suitable for appliances
including VCR cameras and headphone stereos which need
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
0.4
+0.1
–0.05
1.5
0.65
+0.1
–0.15
2
2.9 ±0.2
0.95
power saving.
3
0.4
+0.1
–0.05
FEATURES
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its high
input impedance.
resistor.
0.95
1
0.3
Marking
1.1 to 1.4
0.16
+0.1
–0.06
• Possible to reduce the number of parts by omitting the bias
ORDERING INFORMATION
PART NUMBER
2SK1581
PACKAGE
SC-59 (Mini Mold)
1. Source
2. Gate
3. Drain
Marking: G14
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note
EQUIVALENT CIRCUIT
16
±16
±200
±400
200
150
−55
to +150
V
V
mA
mA
mW
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13556EJ4V0DS00 (4th edition)
Date Published June 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
0 to 0.1
1990
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