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IRF350

产品描述14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
产品类别半导体    分立半导体   
文件大小28KB,共2页
制造商SEME-LAB
官网地址http://www.semelab.co.uk
下载文档 详细参数 选型对比 全文预览

IRF350概述

14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

14 A, 400 V, 0.4 ohm, N沟道, 硅, POWER, 场效应管, TO-204AA

IRF350规格参数

参数名称属性值
端子数量2
最小击穿电压400 V
加工封装描述HERMETIC SEALED, METAL, TO-3, 2 PIN
状态ACTIVE
包装形状ROUND
包装尺寸FLANGE MOUNT
端子形式PIN/PEG
端子涂层NOT SPECIFIED
端子位置BOTTOM
包装材料METAL
结构SINGLE
壳体连接DRAIN
元件数量1
晶体管元件材料SILICON
通道类型N-CHANNEL
场效应晶体管技术METAL-OXIDE SEMICONDUCTOR
操作模式ENHANCEMENT
晶体管类型GENERAL PURPOSE POWER
最大漏电流14 A
额定雪崩能量11.3 mJ
最大漏极导通电阻0.4000 ohm
最大漏电流脉冲56 A

文档预览

下载PDF文档
IRF350
2N6768
MECHANICAL DATA
Dimensions in mm (inches)
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
N-CHANNEL
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• REPETITIVE AVALANCHE RATINGS
• DYNAMIC DV/DT RATING
1
20.32 (0.800)
18.80 (0.740)
dia.
7.87 (0.310)
6.99 (0.275)
1.78 (0.070)
1.52 (0.060)
11.18 (0.440)
10.67 (0.420)
26.67 (1.050)
max.
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
2
400V
14A
Ω
0.300Ω
• HERMETICALL SEALED
• SIMPLE DRIVE REQUIREMENTS
• EASE OF PARALLELING
1.09 (0.043)
0.97 (0.038)
dia.
2 plcs.
TO–3 (TO-204AA) Metal Package
Pin 1 – Source
Pin 2 – Gate
Case – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
DM
P
D
E
AS
I
AR
E
AR
dv/dt
T
J
, T
stg
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
3
Avalanche Current
1
Repetitive Avalanche Energy
1
Peak Diode Recovery
4
Operating and Storage Temperature Range
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
±20V
14A
9.0A
56A
150W
1.2W/°C
11.3mJ
14A
15mJ
4.0V/ns
-55 to +150°C
Notes
1) Pulse Width
300μs, Duty Cycle
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
3) VDD = 50V ,Peak IL = 14A , Starting TJ = 25°C
4) ISD
14A , di/dt
145A/μs , VDD
400V, TJ
150°C , Suggested RG = 2.35Ω
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
12.07 (0.475)
11.30 (0.445)
Document Number 6252
Issue 1

IRF350相似产品对比

IRF350 2N6768
描述 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
端子数量 2 2
最小击穿电压 400 V 400 V
加工封装描述 HERMETIC SEALED, METAL, TO-3, 2 PIN HERMETIC SEALED, METAL, TO-3, 2 PIN
状态 ACTIVE ACTIVE
包装形状 ROUND ROUND
包装尺寸 FLANGE MOUNT FLANGE MOUNT
端子形式 PIN/PEG PIN/PEG
端子涂层 NOT SPECIFIED NOT SPECIFIED
端子位置 BOTTOM BOTTOM
包装材料 METAL METAL
结构 SINGLE SINGLE
壳体连接 DRAIN DRAIN
元件数量 1 1
晶体管元件材料 SILICON SILICON
通道类型 N-CHANNEL N-CHANNEL
场效应晶体管技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
操作模式 ENHANCEMENT ENHANCEMENT
晶体管类型 GENERAL PURPOSE POWER GENERAL PURPOSE POWER
最大漏电流 14 A 14 A
额定雪崩能量 11.3 mJ 11.3 mJ
最大漏极导通电阻 0.4000 ohm 0.4000 ohm
最大漏电流脉冲 56 A 56 A

 
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