IRFNJ130N
IRFN130SMD05
MECHANICAL DATA
Dimensions in mm (inches)
7.54 (0.296)
0.76 (0.030)
min.
2.41 (0.095)
2.41 (0.095)
0.127 (0.005)
3.175 (0.125)
Max.
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DSS
I
D(cont)
R
DS(on)
FEATURES
3.05 (0.120)
1
3
10.16 (0.400)
5.72 (.225)
2
100V
11A
Ω
0.19Ω
0.76
(0.030)
min.
0.127 (0.005)
16 PLCS
0.50(0.020)
7.26 (0.286)
0.127 (0.005)
0.50 (0.020)
max.
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
SMD05 (TO-276AA)
IRFNJ130
PAD1 = GATE
PAD 2 DRAIN
PAD3 = SOURCE
• ALL LEADS ISOLATED FROM CASE
IRFN130SMD05
PAD1 = SOURCE
PAD 2 = DRAIN
PAD3 = GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
R
θJC
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
±20V
11A
7A
44A
45W
0.36W/°C
–55 to 150°C
2.8°C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5831
Issue 1
IRFNJ130N
IRFN130SMD05
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Parameter
BV
DSS
∆T
J
R
DS(on)
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Breakdown Voltage
Static Drain – Source On–State
Resistance
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 11A
V
DS
= 0.5BV
DSS
V
DD
= 50V
I
D
= 11A
R
G
= 7.5Ω
I
D
= 11A
I
D
= 7A
I
D
= 11A
I
D
= 250µA
I
DS
= 7A
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
100
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
Reference to 25°C
0.1
0.19
0.22
2
3
25
250
100
-100
650
240
44
12.8
1.0
3.8
28.5
6.3
16.6
30
75
40
45
11
43
4
V / °C
Ω
V
S(Ω
µA
nA
)
Ω
(
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
pF
nC
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
PACKAGE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
I
S
= 11A
V
GS
= 0
I
S
= 11A
T
J
= 25°C
d
i
/ d
t
≤
100A/µs V
DD
≤
50V
(from 6mm down drain lead pad to centre of die)
A
V
ns
µC
T
J
= 25°C
1.5
300
3
8.7
8.7
nH
(from 6mm down source lead to centre of source bond pad)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5831
Issue 1
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