BTA16, BTB16
T1610, T1635
16 A Snubberless™, logic level and standard Triacs
Features
■
■
■
■
■
■
■
A2
Medium current Triac
G
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic for
insulated BTA
High commutation (4Q) or very high
commutation (3Q) capability
BTA series UL1557 certified (File ref: 81734)
RoHS ( 2002/95/EC) compliant
Insulated tab (BTA series, rated at 2500 V
RMS
)
A1 A2
G
A1
A2
D
2
PAK
T1610G
T1635G
A2
Applications
■
Snubberless versions (BTA/BTB...W and
T1635) especially recommended for use on
inductive loads, because of their high
commutation performances
On/off or phase angle function in applications
such as static relays, light dimmers and
appliance motor speed controllers
A1
A2
G
A1
A2
G
■
TO-220AB
insulated
BTA16
TO-220AB
BTB16
Description
Available either in through-hole or surface-mount
packages, the BTA16, BTB16, T1610 and T1635
Triacs series are suitable for general purpose
mains power AC switching.
Table 1.
Symbol
I
T(RMS)
V
DRM
/V
RRM
Device summary
Parameter
On-state rms current
Repetitive peak off-state voltage
BTA16
(1)
16
600/800
35/50
10
25/50
BTB16
16
600/800
35/50
10
25/50
T1610
16
600/800
-
10
-
T1635
16
600/800
35
-
-
I
GT
(Snubberless) Triggering gate current
I
GT
(logic level)
I
GT
(standard)
1. Insulated
Triggering gate current
Triggering gate current
TM:
Snubberless is a trademark of STMicroelectronics
March 2010
Doc ID 7471 Rev 9
1/10
www.st.com
10
Characteristics
BTA16, BTB16, T1610, T1635
1
Characteristics
Table 2.
Symbol
Absolute maximum ratings
Parameter
D
2
PAK /
TO-220AB
TO-220AB
insulated
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
c
= 100 °C
16
T
c
= 86 °C
t = 20 ms
t = 16.7 ms
160
A
168
144
50
V
DRM
/V
RRM
+ 100
4
1
-40 to + 150
-40 to + 125
Value
Unit
I
T(RMS)
On-state rms current
(full sine wave)
A
I
TSM
I
²
t
dI/dt
V
DSM
/
V
RSM
I
GM
P
G(AV)
T
stg
T
j
Non repetitive surge peak on-state
current
(full cycle, T
j
initial = 25 °C)
I
²
t value for fusing
A
²
s
A/µs
V
A
W
Critical rate of rise of on-state current
F = 120 Hz
I
G
= 2 x I
GT
, t
r
≤
100 ns
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage temperature range
Maximum operating junction temperature
t
p
= 10 ms
t
p
= 20 µs
Table 3.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
BTA16 / BTB16
Test conditions
Quadrant
I - II - III
I - II - III
I - II - III
Max.
Max.
Min.
Max.
I - III
Max.
II
T
j
= 125 °C
Min.
30
40
8.5
Min.
3.0
-
60
500
-
-
8.5
30
40
8.5
3.0
-
60
500
-
-
8.5
80
1000
-
-
14
A/ms
V/µs
15
25
35
50
T1610 T1635
SW
CW
35
BW
50
mA
V
V
35
50
50
70
mA
mA
10
35
10
1.3
0.2
15
25
Unit
Symbol
I
GT (1)
V
GT
V
GD
I
H (2)
I
L
dV/dt
(2)
V
D
= 12 V
R
L
= 33
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125 °C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open
(dV/dt)c = 0.1 V/µs T
j
= 125 °C
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Without snubber
T
j
= 125 °C
T
j
= 125 °C
1. Minimum IGT is guaranted at 5% of I
GT
max
2. For both polarities of A2 referenced to A1
2/10
Doc ID 7471 Rev 9
BTA16, BTB16, T1610, T1635
Table 4.
Characteristics
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
standard (4 quadrants)
BTA16 / BTB16
Test conditions
Quadrant
C
B
50
100
1.3
0.2
25
40
Max.
II
T
j
= 125 °C
T
j
= 125 °C
Min.
Min.
80
200
5
120
400
10
V/µs
V/µs
50
60
mA
mA
V
V
mA
I - II - III
IV
ALL
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125 °C
I
T
= 500 mA
I - III - IV
I
G
= 1.2 I
GT
ALL
25
50
Unit
Symbol
I
GT (1)
V
GT
V
GD
I
H (2)
I
L
V
D
= 12 V
R
L
= 33
Ω
Max.
Max.
Min.
Max.
dV/dt
(2)
V
D
= 67 %V
DRM
gate open
(dV/dt)c
(2)
(dI/dt)c = 7 A/ms
1. Minimum IGT is guaranted at 5% of I
GT
max
2. For both polarities of A2 referenced to A1
Table 5.
Symbol
V
T
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Static characteristics
Test conditions
I
TM
= 22.5 A
t
p
= 380 µs
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Max.
Max.
Max.
Max.
2
mA
Value
1.55
0.85
25
5
Unit
V
V
mΩ
µA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
Table 6.
Symbol
R
th(j-c)
Thermal resistance
Parameter
D
2
PAK / TO-220AB
Junction to case (AC)
TO-220AB insulated
S
(1)
= 1 cm
²
D
2
PAK
2.1
45
°C/W
60
Value
1.2
°C/W
Unit
R
th(j-a)
Junction to ambient
TO-220AB / TO-220AB
insulated
1. S = Copper surface under tab
Doc ID 7471 Rev 9
3/10
Characteristics
BTA16, BTB16, T1610, T1635
Figure 1.
P(W)
20
18
16
14
12
10
8
6
4
2
0
0
2
Maximum power dissipation versus Figure 2.
on-state rms current (full cycle)
I
T(RMS)
(A)
18
16
14
On-state rms current versus case
temperature (full cycle)
BTB / T16
BTA
12
10
8
6
4
I
T(RMS)
(A)
4
6
8
10
12
14
16
2
0
0
25
50
T
C
(°C)
75
100
125
Figure 3.
I
T(RMS)
(A)
4.0
On-state rms current versus
ambient temperature (full cycle)
Figure 4.
Relative variation of thermal
impedance versus pulse duration
K=[Z
th
/R
th
]
1E+0
D
2
PAK
(S=1cm
2
)
Z
th(j-c)
printed circuit board FR4, copper thickness: 35 µm
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
Z
th(j-a)
1E-1
T
C
(°C)
75
100
125
1E-2
1E-3
1E-2
1E-1
t
p
(s)
1E+0
1E+1
1E+2
5E+2
Figure 5.
I
TM
(A)
200
100
T
j
max.
V
to
= 0.85V
R
d
= 25 m
Ω
On-state characteristics
(maximum values)
Figure 6.
Surge peak on-state current versus
number of cycles
I
TSM
(A)
180
160
140
t=20ms
T
j
= T
j
max.
120
100
T
j
= 25°C.
Non repetitive
T
j
initial=25°C
One cycle
10
80
60
40
Repetitive
T
C
=85°C
V
TM
(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
20
0
1
10
Number of cycles
100
1000
4/10
Doc ID 7471 Rev 9
BTA16, BTB16, T1610, T1635
Characteristics
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal
2
2
Relative variation of gate trigger
current
I
TSM
(A), I t (A s)
3000
T
j
initial=25°C
dI/dt limitation:
50A/µs
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
holding current and latching current versus junction
temperature (typical values)
2.0
I
GT
1000
I
TSM
1.5
I
H
& I
L
1.0
I
2
t
0.5
2
100
pulse with width t
p
< 10 ms and corresponding value of I t
0.01
0.10
1.00
t
p
(ms)
10.00
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Figure 9.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
Figure 10. Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
Standard types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
Snubberless and Logic level types
1.8
1.6
B
C
SW
5
4
3
2
1
1.4
1.2
1.0
0.8
0.6
T1635/CW/BW
(dV/dt)c (V/µs)
0.4
0.1
1.0
10.0
100.0
0
0
25
50
T
j
(°C)
75
100
125
Figure 11. D
2
PAK thermal resistance junction to ambient versus copper surface under tab
(printed circuit board FR4, copper thickness: 35 µm)
R
th(j-a)
(°C/W)
80
70
60
50
D
2
PAK
40
30
20
10
S(cm²)
0
0
4
8
12
16
20
24
28
32
36
40
Doc ID 7471 Rev 9
5/10
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