2STF2360
Low voltage fast-switching PNP power transistors
Datasheet
-
production data
Applications
4
3
2
1
•
Emergency lighting
•
LED
•
Voltage regulation
•
Relay drive
SOT-89
Figure 1. Internal schematic diagram
Description
The device is PNP transistor manufactured using
new “PB-HDC” (power bipolar high density
current) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Features
•
Very low collector-emitter saturation voltage
•
High current gain characteristic
•
Fast-switching speed
Table 1. Device summary
Order code
2STF2360
Marking
2360
Package
SOT-89
Packaging
Tape and reel
December 2014
This is information on a product in full production.
DocID13309 Rev 6
1/11
www.st.com
Contents
2STF2360
Contents
1
2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Typical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1
SOT-89 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
DocID13309 Rev 6
2STF2360
Absolute maximum ratings
1
Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
Tstg
TJ
Parameter
Collector-base voltage
(I
E
= 0)
Value
-60
-60
-6
-3
-5
-0.2
-0.4
1.4
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
°C
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Collector current
Collector peak current (t
P
< 5 ms)
Base current
Base peak current (t
P
< 5 ms)
Total dissipation at T
amb
= 25 °C
Storage temperature
Max. operating junction temperature
(I
C
= 0)
Table 3. Thermal data
Symbol
R
thJA(1)
Parameter
Thermal resistance junction-ambient
___ _Max
SOT-89
89
Unit
°C/W
1. Device mounted on a PCB area of 1 cm
2
DocID13309 Rev 6
3/11
11
Electrical characteristics
2STF2360
2
Electrical characteristics
T
CASE
= 25°C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol
I
CBO
I
EBO
V
BE(on)
V
CE(sat)(1)
V
BE(sat) (1)
(1)
Parameter
Collector cut-off current
(I
E
= 0)
Emitter cut-off current
(I
C
= 0)
Base-emitter on voltage
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Delay time
Rise time
Storage time
Fall time
Transition frequency
Test conditions
V
CB
= - 60 V
V
EB
= - 6 V
V
CE
= - 2 V
I
C
= - 2 A
I
C
= - 3 A
_
I
C
= - 2 A
I
C
= - 100 mA
I
B
= - 100 mA
I
B
= - 150 mA
_
I
B
= -100 mA
Min.
Typ.
Max.
-100
-100
Unit
nA
nA
mV
mV
mV
V
-630
-650
-200
-300
-0.9
-730
-320
-500
-1.2
hFE
I
C
= - 100 mA_ V
CE
= - 2 V
I
C
= - 1 A
_
V
CE
= - 2 V
I
C
= - 3 A
V
CC
= - 10 V
I
B(on)
= - I
B(off)
= - 300 mA
V
BE(off)
= 5 V
I
C
= - 0.1 A
__
V
CE
= - 10 V
200
160
10
75
250
35
130
400
15
100
350
50
ns
ns
ns
ns
MHz
td
tr
ts
tf
f
T
1. Pulse test: pulse duration
≤
300 µs, duty cycle
≤
2 %
4/11
DocID13309 Rev 6
2STF2360
Electrical characteristics
2.1
Typical characteristics (curves)
Figure 2. DC current gain (V
CE
= - 2 V)
Figure 3. DC current gain (V
CE
= - 5 V)
Figure 4. Collector emitter saturation voltage
Figure 5. Base emitter saturation voltage
Figure 6. Resistive load switching on
Figure 7. Resistive load switching off
DocID13309 Rev 6
5/11
11
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