SMP690G-KQS
MECHANICAL DATA
Dimensions in mm.
P.I.N. PHOTODIODE
FEATURES
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•
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•
•
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HIGH SENSITIVITY
WIDEST SPECTRAL RESPONSE
ENHANCED UV SENSITIVITY
PHOTODIODE ISOLATED FROM PACKAGE
EXCELLENT LINEARITY
LOW NOISE
INTEGRAL OPTICAL FILTER OPTION note 1
TO8 HERMETIC METAL CAN PACKAGE
EMI SCREENING MESH AVAILABLE
Ø 14.0
Ø 12.0
Ø 0.45
LEAD
8.0
38 nom.
5.5
Note 1 Contact Semelab Plc for filter options
DESCRIPTION
3
2
1
The SMP690G-KQS is a Silicon P.I.N. photodiode
incorporated in a hermetic metal can package. The package
window has greater ultra-violet light transmission, thus extending
the useful spectral range of the device. The electrical terminations
are via two leads of diameter 0.018" on pitch centre diameter of
0.2". The photodiode is electrically isolated from the package,
which has a separate earth lead.
The larger photodiode active area provides greater sensitivity
than the SMP600 range of devices, with a corresponding
reduction in speed. The photodiode structure has been optimised
for high sensitivity, light measurement applications across the
infra-red to ultra-violet spectrum. Inclusion of a suitable optical
filter into the package can produce a device that responds only to
ultra-violet light. The metal can, isolated photodiode and optional
screening mesh ensure a rugged device with a high degree of
immunity to conducted and radiated electrical interference.
TO8 Small
Pin 1 – Anode
Pin 2 – Cathode
Pin 3 –Case
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
-40°C to +70°C
-45°C to +80°C
0.35% per °C
x2 per 8°C rise
60V
Prelim. 1/98
SMP690G-KQS
CHARACTERISTICS
(Tamb=25°C unless otherwise stated)
Characteristic
Test Conditions.
Responsively
Active Area
Dark Current
Breakdown Voltage
Capacitance
E = 0 Dark
E = 0 Dark
E = 0 Dark
E = 0 Dark
E = 0 Dark
30V Reverse
50Ω
900nm
Directional characteristics
Min.
0.45
Typ.
0.55
15
Max.
Units
A/W
mm
2
λ
at 900nm
1V Reverse
10V Reverse
10µA Reverse
0V Reverse
20V Reverse
60
2
6
nA
V
pF
80
90
25
12
20x10
-14
0.45
Rise Time
NEP
ns
W/√Hz
Directional Characteristics
1
80°
70°
Angle from sensor
to illumination
1
0.9
0.8
60°
50°
0.6
Normalised Incident Power
Normalised incident power
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
40°
30°
0.4
20°
0.2
10°
0
0
0.2
0.4
0.6
0.8
1
Normalised incident power
0
10
20
30
40
50
60
70
80
90
Angle from se nsor to illumination
Spectral Response
100
Relative Responsivity (%)
80
60
40
20
0
0
200
400
600
800
Wave le ngth (nm)
1000
1200
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/98
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