SMP550G-FL
MECHANICAL DATA
Dimensions in mm.
P.I.N. PHOTODIODE
FEATURES
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EYE RESPONSE DETECTION
PHOTODIODE ISOLATED FROM PACKAGE
EXCELLENT LINEARITY
LOW NOISE
WIDE SPECTRAL RESPONSE
LOW LEAKAGE CURRENT
LOW CAPACITANCE
BG18 INTEGRAL OPTICAL FILTER
TO39 HERMETIC METAL CAN PACKAGE
EMI SCREENING MESH AVAILABLE
WINDOW
Ø 5.9 ± 0.1
Ø 9.1 ± 0.2
Ø 8.1 ± 0.1
SENSITIVE
SURFACE
Ø 0.45
LEAD
5.08 ± 0.2
3
2
1
20
3.8 ± 0.2
DESCRIPTION
The SMP550G-FL is a Silicon P.I.N. photodiode
incorporated in a hermetic metal can package. The
electrical terminations are via two leads of diameter 0.018"
on a pitch centre diameter of 0.2". The can structure
incorporates an photoptic response optical filter with peak
transmission at 510nm. The cathode of the photodiode is
electrically isolated from the package, which has a
separate earth pin.
TO-39 Package
Pin 1 – Anode
Pin 2 – Cathode
Pin 3 – Case
The larger photodiode active area provides greater
sensitivity than the SMP400 range of devices, with a
corresponding reduction in speed. The photodiode
structure has been optimised for high sensitivity, light
measurement applications. The metal can and optional
screening mesh ensure a rugged device with a high
degree of immunity to radiated electrical interference.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
-40°C to +70°C
-45°C to +80°C
0.35% per °C
x2 per 8°C rise
60V
Prelim. 1/98
SMP550G-FL
CHARACTERISTICS
(Tamb=25°C unless otherwise stated)
Characteristic
Test Conditions.
Responsi ely
v
Active Area
Dark Current
Breakdo wn Voltage
Capacitance
E = 0 Dar k
E = 0 Dar k
E = 0 Dar k
E = 0 Dar k
E = 0 Dar k
30V Reverse
50Ω
900nm
Directional characteristics
Min.
0.45
Typ.
0.55
5.19
Max . Units
A/W
mm
2
4
22
nA
V
pF
λ
at 900nm
1V Reverse
10V Reverse
10µA Reverse
0V Reverse
20V Reverse
60
2
16
80
55
10
9
19x10
-14
Rise Time
NEP
ns
0.45
W/√Hz
Directional Characteristics
1
80°
70°
Angle from sensor
to illumination
1
0.9
0.8
Normalised Incident Power
60°
0.8
50°
0.6
0.7
0.6
0.5
0.4
0.3
0.2
40°
30°
0.4
20°
0.2
10°
0.1
0
0
0
0.2
0.4
0.6
0.8
1
Normalised incident power
0
10
20
30
40
50
60
70
80
90
Angle from sensor to illumination
Spectral Response
100
Relative Responsivity (%)
80
60
40
20
0
0
200
400
600
Wavelength (nm)
800
1000
1200
Semelab plc .
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/98
stm32/stm8
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