SMP400G-BB
MECHANICAL DATA
Dimensions in mm.
P.I.N. PHOTODIODE
FEATURES
•
•
•
•
•
•
•
•
•
•
EXCELLENT LINEARITY
LOW NOISE
WIDEST SPECTRAL RESPONSE
WIDE INTRINSIC BANDWIDTH
ENHANCED UV SENSITIVITY
LOW LEAKAGE CURRENT
LOW CAPACITANCE
INTEGRAL OPTICAL FILTER OPTION note 1
TO18 HERMETIC METAL CAN PACKAGE
EMI SCREENING MESH AVAILABLE
Ø 5.4
Ø 4.7
Ø 0.45
Lead
13 nom.
3.6
2.54
Note 1 Contact Semelab Plc for filter options
Cathode
and case
Anode
DESCRIPTION
The SMP400G-BB is a Silicon P.I.N. photodiode
incorporated in a compact, hermetic metal can package.
The package window has greater ultra-violet light
transmission, thus extending the useful spectral range of
the device. The electrical terminations are via two leads of
diameter 0.005" on a pitch of 0.1". The cathode of the
photodiode is electrically connected to the package.
The photodiode structure has been optimised for high
sensitivity, high speed light measurement applications
across the infra-red to ultra-violet spectrum. Inclusion of a
suitable optical filter into the package can produce a device
that responds only to ultra-violet light. The metal can and
optional screening mesh ensure a rugged device with a
high degree of immunity to radiated electrical interference.
TO-18 Package
Pin 1 – Anode
Pin 2 – Cathode & Case
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
Operating temperature range
Storage temperature range
Temperature coefficient of responsively
Temperature coefficient of dark current
Reverse breakdown voltage
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
-40°C to +70°C
-45°C to +80°C
0.35% per °C
x2 per 8°C rise
60V
Prelim. 1/98
SMP400G-BB
CHARACTERISTICS
(Tamb=25°C unless otherwise stated)
Characteristic
Test Conditions.
Responsively
Active Area
Dark Current
Breakdown Voltage
Capacitance
E = 0 Dark
E = 0 Dark
E = 0 Dark
E = 0 Dark
E = 0 Dark
30V Reverse
50Ω
900nm
Directional characteristics
Min.
0.45
Typ.
0.55
0.62
Max.
Units
A/W
mm
2
λ
at 900nm
1V Reverse
10V Reverse
10µA Reverse
0V Reverse
20V Reverse
60
0.1
0.5
80
8
1.5
4
7.2
1.0
2.5
nA
V
12
2.5
pF
Rise Time
NEP
ns
0.45
W/√Hz
Directional Characteristics
1
80°
70°
Angle from sensor
to illumination
1
0.9
0.8
Normalised Incident Power
60°
0.8
50°
0.6
0.7
0.6
0.5
0.4
0.3
0.2
40°
30°
0.4
20°
0.2
10°
0.1
0
0
0
0.2
0.4
0.6
0.8
1
Normalised incident power
0
10
20
30
40
50
60
70
80
90
Angle from sensor to illumination
Spectral Response
100
Relative Responsivity (%)
80
60
40
20
0
0
200
400
600
Wavelength (nm)
800
1000
1200
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/98
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
