2N6802
IRFF430
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
N–CHANNEL ENHANCEMENT
MODE POWER MOSFET
4.06 (0.16)
4.57 (0.18)
12.70
(0.500)
min.
0.89 max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
BV
DSS
I
D(cont)
R
DS(on)
2.54
(0.100)
500V
2.5
Ω
1.5Ω
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
3
FEATURES
• AVALANCHE ENERGY RATED
• HERMETICALLY SEALED
45°
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
TO39 – Package (TO-205AF)
Underside View
Pin 1 – Source
Pin 2 – Gate
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
dv/dt
T
J
, T
stg
R
θJC
R
θJA
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
(V
GS
= 10V , T
case
= 25°C)
(V
GS
= 10V , T
case
= 100°C)
±20V
2.5A
1.5A
11A
25W
0.2W/°C
0.35mJ
3.5V/ns
–55 to +150°C
5.0°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width
≤
300µs,
δ ≤
2%
2) @ V
DD
= 50V , Peak I
L
= 2.5A , Starting T
J
= 25°C
3) @ I
SD
≤
2.5A , di/dt
≤
75A/µs , V
DD
≤
BV
DSS
, T
J
≤
150°C , SUGGESTED R
G
= 7.5Ω
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5357
Issue: 1
2N6802
IRFF430
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
∆T
J
R
DS(on)
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Breakdown Voltage
Static Drain – Source On–State
Resistance
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
>
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DS
I
D
= 2.5A
I
D
=2.5A
V
DS
= 0.5BV
DS
R
G
= 7.5Ω
I
D
= 1.5A
I
D
= 2.5A
I
D
= 250µA
I
DS
= 1.5A
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
500
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
Reference to 25°C
0.43
1.5
1.725
2
1.5
25
250
100
–100
610
135
65
19.8
2.2
5.5
29.5
4.6
19.7
30
30
55
30
2.5
4
V / °C
Ω
V
S(Ω
µA
nA
)
Ω
(
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
pF
nC
ns
I
S
= 2.5A
I
F
= 1.5A
I
F
= 2.5A
V
GS
= 0
T
J
= 25°C
T
J
= 25°C
Negligible
11
1.4
900
7.0
A
V
ns
µC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
d
i
/ d
t
≤
100A/µs V
DD
≤
50V
1) Pulse Test: Pulse Width
≤
300µs,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Document Number 5357
Issue: 1
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