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BCV61C-TAPE-13: 产品描述TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小80KB，共4页; 制造商NXP(恩智浦); 官网地址https://www.nxp.com

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BCV61C-TAPE-13概述

TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

BCV61C-TAPE-13规格参数

参数名称	属性值
厂商名称	NXP(恩智浦)
包装说明	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	COLLECTOR
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	30 V
配置	CURRENT MIRROR
最小直流电流增益 (hFE)	420
JESD-30 代码	R-PDSO-G4
元件数量	1
端子数量	4
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管元件材料	SILICON
标称过渡频率 (fT)	300 MHz
VCEsat-Max	0.6 V

BCV61C-TAPE-13相似产品对比

	BCV61C-TAPE-13	BCV61A-TAPE-13	BCV61A-TAPE-7	BCV61B-TAPE-13	BCV61C-TAPE-7	BCV61-TAPE-13	BCV61-TAPE-7	BCV61B-TAPE-7
描述	TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
厂商名称	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)
包装说明	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	30 V	30 V	30 V	30 V	30 V	30 V	30 V	30 V
配置	CURRENT MIRROR	CURRENT MIRROR	CURRENT MIRROR	CURRENT MIRROR	CURRENT MIRROR	CURRENT MIRROR	CURRENT MIRROR	CURRENT MIRROR
最小直流电流增益 (hFE)	420	110	110	200	420	110	110	200
JESD-30 代码	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
元件数量	1	1	1	1	1	1	1	1
端子数量	4	4	4	4	4	4	4	4
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz
VCEsat-Max	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V	0.6 V

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