UHBS60-1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI UHBS60-1
is Designed for
PACKAGE STYLE .230 6L FLG
FEATURES:
•
•
•
Omnigold™
Metalization System
.115
.430 D
E
.125
G
F
H
I
J K
L
A
.040x45°
4X .025 R
C
B
2XØ.130
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
9.0 A
50 V
26 V
50 V
4.0 V
190 W @ T
C
= 25 C
-65
O
C to +200
O
C
-65 C to +150 C
0.9
O
C/W
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
MAXIMUM
inches / mm
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.970 / 24.64
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
ORDER CODE: ASI10672
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
I
CBO
h
FE
C
ob
P
G
η
C
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 20 V
V
CB
= 30 V
T
C
= 25 C
O
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
50
50
26
3.0
10
5
UNITS
V
V
V
V
mA
mA
---
pF
dB
%
V
CE
= 5.0 V
V
CB
= 24 V
V
CE
= 24 V
I
C
= 1.0 A
f = 1.0 MHz
P
OUT
= 60 W
f = 900 GHz
20
100
75
7.5
55
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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