DIGITAL AUDIO MOSFET
IRFS5615PbF
IRFSL5615PbF
Key Parameters
150
34.5
26
11
2.7
175
D
D
PD - 96204
Features
•
Key Parameters Optimized for Class-D Audio
Amplifier Applications
•
Low R
DSON
for Improved Efficiency
•
Low Q
G
and Q
SW
for Better THD and Improved
Efficiency
•
Low Q
RR
for Better THD and Lower EMI
•
175°C Operating Junction Temperature for
Ruggedness
•
Can Deliver up to 300W per Channel into 4Ω Load in
Half-Bridge Configuration Amplifier
G
S
D
V
DS
R
DS(ON)
typ. @ 10V
Q
g
typ.
Q
sw
typ.
R
G(int)
typ.
T
J
max
V
m
:
nC
nC
Ω
°C
S
G
G
D
S
D
2
Pak
IRFS5615PbF
D
TO-262
IRFSL5615PbF
S
G
Description
Gate
Drain
Source
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
150
±20
33
24
140
144
72
0.96
-55 to + 175
Units
V
f
f
c
A
W
W/°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
°C
300
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
f
Parameter
h
Typ.
–––
–––
Max.
1.045
40
Units
°C/W
Notes
through
are on page 2
www.irf.com
1
12/18/08
IRFS/SL5615PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
g
fs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
R
G(int)
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
L
D
L
S
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.18
34.5
–––
-13
–––
–––
–––
–––
–––
26
6.4
2.2
9.0
8.9
11
2.7
8.9
23.1
17.2
13.1
1750
155
40
175
4.5
7.5
–––
–––
42
5.0
–––
20
250
100
-100
–––
40
–––
–––
–––
–––
–––
5.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
nH
–––
pF
Ω
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 21A
V V
DS
= V
GS
, I
D
= 100µA
e
mV/°C
µA
nA
S
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 50V, I
D
= 21A
V
DS
=75V
nC
V
GS
= 10V
I
D
= 21A
See Fig. 6 and 19
V
DD
= 75V, V
GS
= 10V
ns
I
D
= 21A
R
G
= 2.4Ω
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz,
Ãe
See Fig.5
D
V
GS
= 0V, V
DS
= 0V to 120V
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
S
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Ãg
d
Typ.
Max.
Units
mJ
A
mJ
–––
109
g
Min.
–––
–––
–––
–––
–––
–––
–––
–––
80
312
See Fig. 14, 15, 17a, 17b
Diode Characteristics
Parameter
I
S
@ T
C
= 25°C Continuous Source Current
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Typ. Max. Units
33
A
140
1.3
120
468
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 21A, V
GS
= 0V
T
J
= 25°C, I
F
= 21A, V
R
=120V
di/dt = 100A/µs
Ã
e
e
Notes:
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
Repetitive rating; pulse width limited by max. junction temperature.
avalanche information
Starting T
J
= 25°C, L = 0.51mH, R
G
= 25Ω, I
AS
= 21A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
Pulse width
≤
400µs; duty cycle
≤
2%.
recommended footprint and soldering techniques refer to
R
θ
is measured at
T
J
of approximately 90°C.
application note #AN-994.
2
www.irf.com
IRFS/SL5615PbF
1000
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1000
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
10
5.0V
1
1
5.0V
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.1
≤
60µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
2.5
ID = 21A
VGS = 10V
TJ = 175°C
TJ = 25°C
2.0
10
1.5
1
VDS = 50V
≤60µs
PULSE WIDTH
0.1
2
4
6
8
10
12
14
16
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + C gd, C ds SHORTED
Crss = C gd
Coss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 21A
VDS= 120V
VDS= 75V
VDS= 30V
10000
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
35
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
3
IRFS/SL5615PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
1msec
ISD, Reverse Drain Current (A)
100
ID, Drain-to-Source Current (A)
T J = 175°C
10
T J = 25°C
10
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
40
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
ID = 100µA
ID = 250uA
ID = 1.0mA
ID = 1.0A
VDS, Drain-to-Source Voltage (V)
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
ID, Drain Current (A)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
1
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
0.02324
0.26212
0.50102
0.25880
τi
(sec)
0.000008
0.000106
0.001115
0.005407
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
t1 , Rectangular Pulse Duration (sec)
4
www.irf.com
IRFS/SL5615PbF
RDS(on), Drain-to -Source On Resistance (
Ω)
0.4
EAS , Single Pulse Avalanche Energy (mJ)
500
0.35
0.3
ID = 21A
450
400
350
300
250
200
150
100
50
0
25
50
75
100
ID
TOP
2.8A
5.3A
BOTTOM 21A
0.25
0.2
0.15
0.1
TJ = 125°C
T J = 25°C
4
6
8
10
12
14
16
18
20
0.05
0
125
150
175
Fig 12.
On-Resistance Vs. Gate Voltage
100
Duty Cycle = Single Pulse
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 13.
Maximum Avalanche Energy Vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj
= 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
10
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current Vs.Pulsewidth
120
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 21A
Fig 15.
Maximum Avalanche Energy Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long as neither
Tjmax nor Iav (max) is exceeded
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. B
V
= Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
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EAR , Avalanche Energy (mJ)
5
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