PD - 96166
IRLML5203GPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
V
DSS
-30V
R
DS(on)
max (mW)
98@V
GS
= -10V
165@V
GS
= -4.5V
I
D
-3.0A
-2.6A
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3
TM
,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
*
'
6
Micro3
TM
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
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1
07/22/08
IRLML5203GPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-30
–––
–––
–––
-1.0
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.019
–––
–––
–––
–––
–––
–––
–––
–––
9.5
2.3
1.6
12
18
88
52
510
71
43
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
98
V
GS
= -10V, I
D
= -3.0A
mΩ
165
V
GS
= -4.5V, I
D
= -2.6A
-2.5
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -3.0A
-1.0
V
DS
= -24V, V
GS
= 0V
µA
-5.0
V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
14
I
D
= -3.0A
3.5
nC V
DS
= -24V
2.4
V
GS
= -10V
–––
V
DD
= -15V
–––
I
D
= -1.0A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= -10V
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
17
12
-1.3
-24
-1.2
26
18
V
ns
nC
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.3A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t
≤
5sec.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRLML5203GPbF
100
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
TOP
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
10
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
TOP
1
-2.70V
0.1
1
-2.70V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
0.01
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 3.0A
-I
D
, Drain-to-Source Current (A)
1.5
10
T
J
= 150
°
C
1
1.0
T
J
= 25
°
C
V DS = -15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
0.5
0.1
2.0
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRLML5203GPbF
800
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
=
-3.0A
V
DS
=-24V
V
DS
=-15V
16
C, Capacitance (pF)
600
Ciss
400
12
8
200
4
Coss
Crss
0
1
10
100
0
0
4
8
12
16
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
I
10
10
10us
T
J
= 150
°
C
100us
1
1
1ms
T
J
= 25
°
C
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLML5203GPbF
3.0
V
DS
V
GS
R
D
-I
D
, Drain Current (A)
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
1.0
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
0.0
V
GS
25
50
T
C
, Case Temperature ( ° C)
75
100
125
150
10%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
0.1
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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+
2.0
-
R
G
D.U.T.
V
DD
5
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