MRF314
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
MRF314
is Designed for Class C
Power Amplifier Applications up to 200
MHz.
PACKAGE STYLE .380 4L FLG
FEATURES:
•
P
G
= 10 dB min. at 30 W/ 150 MHz
•
Withstands
30:1
Load VSWR
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
3.4 A
65 V
35 V
4.0 V
82 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.13 °C/W
ORDER CODE: ASI10872
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
OB
P
G
η
C
ψ
I
C
= 30 mA
I
C
= 30 mA
I
E
= 3.0 mA
V
E
= 30 V
V
CE
= 5.0 V
V
CB
= 30 V
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
65
4.0
3.0
UNITS
V
V
V
mA
---
pF
dB
%
I
C
= 1.5 A
f = 1.0 MHz
20
30
10
50
13.5
80
40
V
CC
= 28 V
P
OUT
= 30 W
f = 150 MHz
30:1 all phase angles, no degadation in output.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
微控制器 MCU
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