MRF182
RF POWER FET TRANSISTOR
DESCRIPTION:
The ASI MRF182 is an RF power field
effect transistor, N-Channel
Enhancement-Mode lateral MOSFET.
PACKAGE STYLE .350 2L FLG
FEATURES INCLUDE:
•
Bradband performance from HF to 1
GHz
•
Omnigold™
Metalization System
•
High Gain, Rugged device.
MAXIMUM RATINGS
V
DSS
V
GS
P
D
T
J
T
STG
θ
JC
65 V
±20 V
74 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.75 °C/W
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
C
iss
C
oss
C
rss
G
PS
η
I
D
= 1.0 µA
V
DS
= 28 V
V
DS
= 0 V
V
DS
= 10 V
V
DS
= 28 V
V
GS
= 10 V
V
DS
= 10 V
V
DS
= 28 V
T
C
= 25 °C
NONE
TEST CONDITIONS
V
GS
= 0 V
V
GS
= 20 V
I
D
= 100 µA
I
D
= 50 mA
I
D
= 3.0 A
I
D
= 3.0 A
V
GS
= 0 V
P
OUT =
30 W
f = 1.0 MHz
f = 945 MHz
MINIMUM
65
TYPICAL MAXIMUM UNITS
1.0
1.0
4.0
5.0
1.2
V
µA
µA
V
V
V
S
pF
dB
%
2.0
3.0
1.6
3.0
4.0
0.9
1.8
56
28
2.5
V
DD
= 28 V
I
DQ
= 50 mA
11
50
14
58
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
嵌入式系统
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