MRF175GV
RF POWER FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The
ASI MRF175GV
is a N-Channel
Enhancement-Mode Push Pull
MOSFET, Designed for FM, and TV
Solid State Transmitter Applications up
to 500 MHz.
PACKAGE STYLE
MAXIMUM RATINGS
I
D
V
DSS
P
DISS
T
J
T
STG
θ
JC
O
O
26 A
65 V
400 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
0.44 C/W
O
O
O
O
1 = DRAIN
2 = DRAIN(2)
3 = GATE(1)
4 = GATE(2)
5 = SOURCE (1&2) -CASE
CHARACTERISTICS
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
DS(on)
g
fs
C
iss
C
oss
C
rss
G
ps
η
ψ
I
D
= 50 mA
V
DS
= 28 V
V
DS
= 0 V
T
C
= 25 C
O
NONE
TEST CONDITIONS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
65
2.5
1.0
1.0
2.0
3.0
3.0
180
200
20
12
55
10:1
14
65
---
6.0
1.5
UNITS
V
mA
µ
A
V
V
mhos
pF
I
D
=100 mA
I
D
= 5.0 A
I
D
= 2.5 A
V
DS
= 28 V
V
DD
= 28 V
I
DQ
= 2 X 100 mA
P
OUT
= 200 W
f = 225 MHz
dB
%
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
