MRA0610-23
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .320 2L FLG
DESCRIPTION:
The
MRA0610-23
is designed for
Class C, Common Base Wideband
Large Signal Amplifier Applications
from 600 MHz to 1.0 GHz, With
Internal Compensating Matching
Network and Diffused Ballast
Resistors.
MAXIMUM RATINGS
I
C
V
CES
T
J
T
STG
θ
JC
3.5 A
(CONT)
50 V
-65 °C to +200 °C
-65 °C to +150 °C
3.0 °C/W
1= COLLECTOR
2= BASE
3= EMITTER
CHARACTERISTICS
SYMBOL
BV
CES
BV
EBO
I
CBO
h
FE
C
ob
G
PB
η
c
T
C
= 25 C
O
NONE
TEST CONDITIONS
I
C
= 150 mA
I
E
= 2.0 mA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
P
out
= 23 W
I
C
= 750 mA
f = 1.0 MHz
f = 600 MHz & 1.0 GHz
MINIMUM TYPICAL MAXIMUM UNITS
50
3.5
3.0
10
100
21
7.0
50
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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