PD-97333 RevA
Integrated Power Hybrid IC for
Appliance Motor Drive Applications
Description
IRAM136-0760A
Series
5A, 600V
with Open Emitter Pins
International Rectifier's IRAM136-0760A is a 5A, 600V Integrated Power Hybrid IC with Open Emitter pins
for advanced Appliance Motor Drives applications such as energy efficient Washing Machine and Refrigerator
Compressor Drivers. IR's technology offers an extremely compact, high performance AC motor-driver in a
single isolated package to simplify design.
This advanced HIC is a combination of IR's low V
CE (on)
Trench IGBT technology and the industry benchmark
3 phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A
built-in high precision temperature monitor and over-current protection feature, along with the short-circuit
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe
operation. Using a Single in line package (SIP05) with full transfer mold structure and CTI>600 minimizes
PCB space and resolves isolation problems to heatsink.
Features
x
x
x
x
x
x
x
x
x
x
x
Integrated gate drivers and bootstrap diodes
Temperature monitor
Protection shutdown pin
Low V
CE (on)
Trench IGBT technology
Undervoltage lockout for all channels
Matched propagation delay for all channels
3.3V Schmitt-triggered input logic
Cross-conduction prevention logic
Lower di/dt gate driver for better noise immunity
Motor Power range 0.1~0.5kW / 85~253 Vac
Isolation 2000VRMS min and CTI> 600
Absolute Maximum Ratings
V
CES
/ V
RRM
V
+
I
o
@ T
C
=25°C
I
o
@ T
C
=100°C
I
pk
F
p
P
d
V
ISO
T
J
(IGBT & Diode & IC)
T
C
T
STG
T
IGBT/ FW Diode Blocking Voltage
Positive Bus Input Voltage
RMS Phase Current (Note 1)
RMS Phase Current (Note 1)
Maximum Peak Phase Current (Note 2)
Maximum PWM Carrier Frequency
Maximum Power dissipation per IGBT @ T
C
=25°C
Isolation Voltage (1min)
Maximum Operating Junction Temperature
Operating Case Temperature Range
Storage Temperature Range
Mounting torque Range (M3 screw)
+
600
450
5
3.5
5.5
20
18
2000
+150
-20 to +100
-40 to +125
0.8 to 1.0
V
A
kHz
W
V
RMS
°C
Nm
Note 1: Sinusoidal Modulation at V =320V, T
J
=150°C, F
PWM
=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: t
P
<100ms, TC=25°C, F
PWM
=16kHz.
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1
IRAM136-0760A
Internal Electrical Schematic – IRAM136-0760A
V+ (13)
Q1
D1
Q2
D2
Q3
D3
VRU (17)
VRV (19)
VRW (21)
Q4
D4
Q5
D5
Q6
D6
R1
VB1 (9)
U, VS1 (10)
VB2 (5)
V, VS2 (6)
VB3 (1)
W, VS3 (2)
D7
D8
D9
C1
R2
R3
C2
C3
R4
R5
R6
23 VS1
R9
24 HO1
25 VB1
1 VCC
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
LO1 16
LO2 15
Driver IC
LO3 14
HIN1 (20)
HIN2 (22)
HIN3 (23)
LIN1 (24)
LIN2 (25)
LIN3 (26)
ITRIP (16)
FLT/EN (18)
R8
2 HIN1
3 HIN2
4 HIN3
LIN1 LIN2 LIN3
6
7
5
F ITRIP EN RCIN VSS
8
9
10 11 12
COM 13
R7
VTH (27)
VCC (28)
VSS (29)
C4
C5
2
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IRAM136-0760A
Absolute Maximum Ratings (Continued)
Symbol
P
BR Peak
V
S1,2,3
V
B1,2,3
V
CC
Parameter
Bootstrap Resistor Peak Power
(Single Pulse)
High side floating supply offset
voltage
High side floating supply voltage
Low Side and logic fixed supply
voltage
Input voltage LIN, HIN, I
Trip
Min
---
V
B1,2,3
- 20
-0.3
-0.3
Max
15.0
V
B1,2,3
+0.3
600
20
Lower of
(V
SS
+15V) or
V
CC
+0.3V
Units Conditions
W
V
V
V
t
P
=100μs, T
C
=100°C
ESR / ERJ series
V
IN
-0.3
V
Inverter Section Electrical Characteristics @T
J
= 25°C
Symbol
V
(BR)CES
V
(BR)CES
/ T
V
CE(ON)
I
CES
V
FM
V
BDFM
R
BR
R
BR
/R
BR
Parameter
Collector-to-Emitter Breakdown
Voltage
Temperature Coeff. Of
Breakdown Voltage
Collector-to-Emitter Saturation
Voltage
Zero Gate Voltage Collector
Current
Diode Forward Voltage Drop
Bootstrap Diode Forward Voltage
Drop
Bootstrap Resistor Value
Bootstrap Resistor Tolerance
Min
600
---
---
---
---
---
--
---
--
---
---
Typ
---
0.3
1.7
2.1
5
80
1.6
1.4
1.2
22
---
Max
---
---
2.0
---
80
---
2.3
---
---
---
±5
%
Units Conditions
V
V/°C
V
A
V
V
V
IN
=0V, I
C
=250μA
V
IN
=0V, I
C
=250μA
(25°C - 150°C)
I
C
=3.5A
T
J
=25°C, V
CC
=15V
I
C
=3.5A
+
T
J
=150°C
V
IN
=0V, V =600V
V
IN
=0V, V
+
=600V, T
J
=150°C
I
F
=3.5A
I
F
=3.5A, T
J
=150°C
I
F
=1A
T
J
=25°C
T
J
=25°C
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3
IRAM136-0760A
Inverter Section Switching Characteristics @ T
J
= 25°C
Symbol
E
ON
E
OFF
E
TOT
E
REC
t
RR
E
ON
E
OFF
E
TOT
E
REC
t
RR
Q
G
Parameter
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-on Switching Loss
Turn-off Switching Loss
Total Switching Loss
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-On IGBT Gate Charge
Min
---
---
---
---
---
---
---
---
---
---
---
Typ
210
20
245
15
135
300
50
350
30
170
9
Max
340
30
370
25
---
---
---
---
---
---
13
ns
nC
See CT1
I
C
=4A, V
+
=400V, V
CC
=15V
T
J
=150°C, I
C
=3.5A, V
P
=600V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V
+
= 450V
V
CC
=+15V to 0V
T
J
=25°C, V
P
=600V,
SCSOA
Short Circuit Safe Operating Area
5
---
---
μs
V
+
= 360V,
V
CC
=+15V to 0V
See CT2
See CT3
μJ
ns
See CT1
I
C
=3.5A, V
+
=400V
V
CC
=15V, L=1.2mH, T
J
=150°C
Energy losses include "tail" and
diode reverse recovery
μJ
Units Conditions
I
C
=3.5A, V
+
=400V
V
CC
=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
I
CSC
Short Circuit Collector Current
---
30
---
A
T
J
=25°C, V
+
= 400V, V
CC
=15V
See CT2
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The V
S
offset is tested with all supplies biased at
15V differential (Note 3)
Symbol
V
B1,2,3
V
S1,2,3
V
CC
V
ITRIP
V
IN
HIN
Definition
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
I
TRIP
input voltage
Logic input voltage LIN, HIN, FLT/EN
High side PWM pulse width
Min
V
S
+12
Note 4
12
V
SS
V
SS
1
Typ
V
S
+15
---
15
---
---
---
Max
V
S
+20
450
20
V
SS
+5
V
SS
+5
---
V
V
μs
μs
Units
V
Deadtime
External dead time between HIN and LIN
1
---
---
Note 3: For more details, see IR21364 data sheet
Note 4: Logic operational for V
s
from COM-5V to COM+600V. Logic state held for V
s
from COM-5V to COM-V
BS
.
(please refer to DT97-3 for more details)
4
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IRAM136-0760A
Static Electrical Characteristics Driver Function @ T
J
= 25°C
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to COM and are
applicable to all six channels. (Note 3)
Symbol
V
IN,th+
V
IN,th-
V
CCUV+,
V
BSUV+
V
CCUV-,
V
BSUV-
V
CCUVH,
V
BSUVH
I
QBS
I
QCC
I
LK
I
IN+
I
IN-
I
TRIP+
I
TRIP-
V(I
TRIP
)
V(I
Trip,
HYS)
R
on_FLT
Definition
Positive going input threshold for LIN, HIN, FLT/EN
Negative going input threshold for LIN, HIN, FLT/EN
V
CC
and V
BS
supply undervoltage, Positive going threshold
V
CC
and V
BS
supply undervoltage, Negative going threshold
V
CC
and V
BS
supply undervoltage lock-out hysteresis
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Offset Supply Leakage Current
Input bias current V
IN
=3.3V for LIN, HIN, FLT/EN
Input bias current V
IN
=0V for LIN, HIN, FLT/EN
I
TRIP
bias current V
T/ITRIP
=3.3V
I
TRIP
bias current V
T/ITRIP
=0V
I
TRIP
threshold Voltage
I
TRIP
Input Hysteresis
Fault low on resistance
Min
2.5
---
10.6
10.4
---
---
---
---
---
-1
---
-1
0.44
---
---
Typ
---
---
11.1
10.9
0.2
---
---
---
100
--
3.3
---
0.49
0.07
50
Max
---
0.8
11.6
11.4
---
120
4
50
195
---
6
---
0.54
---
100
Units
V
V
V
V
V
μA
mA
μA
μA
μA
μA
μA
V
V
Dynamic Electrical Characteristics @ T
J
= 25°C
Driver only timing unless otherwise specified.
Symbol
T
ON
T
OFF
T
FILIN
T
EN
T
FLT
T
BLT-ITRIP
T
ITRIP
D
T
M
T
T
FLT-CLR
Parameter
Input to Output propagation turn-
on delay time (see fig.11)
Input to Output propagation turn-
off delay time (see fig. 11)
Input filter time (HIN,LIN,FLT/EN)
EN to output propagation delay
I
TRIP
to Fault propagation delay
I
TRIP
Blanking Time
I
TRIP
to six switch turn-off
propagation delay (see fig. 2)
Dead Time
Matching Propagation Delay Time
(On & Off) all channels
FAULT clear time (see fig. 2)
Min
---
---
100
300
400
100
---
220
---
---
Typ
0.7
0.7
200
450
600
150
---
290
40
1.7
Max
---
---
---
600
800
---
1.75
360
75
---
Units Conditions
μs
I
C
=3.5A, V
+
=300V
μs
ns
ns
ns
ns
μs
ns
ns
ms
V
IN
=0 or V
IN
=5V
V
IN
=0 or V
IN
=5V, V
EN
=0
V
IN
=0 or V
IN
=5V, V
ITRIP
=5V
V
IN
=0 or V
IN
=5V, V
ITRIP
=5V
I
C
=3.5A, V
+
=300V
V
IN
=0 or V
IN
=5V
External dead time> 400ns
T
C
= 25°C
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